System Co-design of a 600V GaN FET Power Stage with Integrated Driver in a QFN System-in-Package (QFN-SiP)

Chen, Jie; Xie, Yunxiang; Trombley, Django; Murugan, Rajen

doi:10.1109/ectc.2019.00189

Cited by 3 publications

(1 citation statement)

References 6 publications

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“…Despite reduced parasitic inductance, the drivers used were all packaged chips. To further reduce the inductance between the driver chip output terminal and the GaN HEMT gate, as well as the inductance in driver grounding, drivers and GaN HEMT dies were integrated into an 8.00 × 8.00 mm quad flat no-leads (QFN) package by Texas Instruments Incorporated [14]. On the other hand, it was shown that flip-chip technology can further reduce the parasitic inductance and make modules more compact than general wire bonding [15,16].…”

Section: Introductionmentioning

confidence: 99%

Design and Switching Characteristics of Flip-Chip GaN Half-Bridge Modules Integrated with Drivers

Wang

Cheng

et al. 2021

Applied Sciences

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Half-bridge modules with integrated GaN high electron mobility transistors (HEMTs) and driver dies were designed and fabricated in this research. Our design uses flip-chip technology for fabrication, instead of more generally applied wire bonding, to reduce parasitic inductance in both the driver-gate and drain-source loops. Modules were prepared using both methods and the double-pulse test was applied to evaluate and compare their switching characteristics. The gate voltage (Vgs) waveform of the flip-chip module showed no overshoot during the turn-on period, and a small oscillation during the turn-off period. The probabilities of gate damage and false turn-on were greatly reduced. The inductance in the drain-source loop of the module was measured to be 3.4 nH. The rise and fall times of the drain voltage (Vds) were 12.9 and 5.8 ns, respectively, with an overshoot of only 4.8 V during the turn-off period under Vdc = 100 V. These results indicate that the use of flip-chip technology along with the integration of GaN HEMTs with driver dies can effectively reduce the parasitic inductance and improve the switching performance of GaN half-bridge modules compared to wire bonding.

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Section: Introductionmentioning

confidence: 99%