T-gate geometric (solution for submicrometer gate length) HEMT: Physical analysis, modeling and implementation as parasitic elements and its usage as dual gate for variable gain amplifiers

Metal Insulator Gate Geometric HEMT: Novel Attributes and Design Consideration for High Speed Analog Applications

“…Generalized analytical model for HEMT [30,[32][33][34] has been used to obtain the analytical results. The expression of drain current in different region for different metal-insulator gate geometric HEMT is given by .…”

“…2 to obtain the resultant capacitance for various metalinsulator geometries under consideration. Using the drain current model evaluated in the above section, gatesource capacitance and gate-drain capacitance is calculated in various regions and is given by [30,[32][33][34] and 3 5 3 3 2 2 4 2 2 1 4…”

“…All these parameter variations have been analyzed by performing analytical analysis supported by simulation work [31]. Generalized analytical models for HEMT [30,[32][33][34] have been used to obtain the analytical results for various metal-insulator geometries by considering different values of insulator thickness and permittivity in various regions of the device under consideration. Taking into account, the present lithographic scenario and controlled thermal reflow treatment [11] on multiresist process for fabrication, a gate geometry has been considered, which upon playing with the insulator thickness and dielectric constant of the material forming the gate-dielectric system can give an account of various metal-insulator geometries in which the effect of FP can be made possible either on source side (SFP), or drain side (DFP) or on both source and drain end (BFP).…”