Tailoring the electronic properties of GaxIn1−xP beyond simply varying alloy composition

Abstract

Spontaneous ordering in GaxIn1−xP provides the possibility of tuning electronic structure and improving transport properties. A quasiperiodic twinning structure of two ordered variants offers additional flexibilities in designing the material properties. The superstructure is shown to have distinctively different electronic and electrical properties from the single-variant ordered structure, as revealed in polarized elecroreflectance and cross-sectional scanning Kelvin probe force microscopy measurements. The entire potentially accessible range of the “direct” bandgap is defined for this alloy system, and thus the optimal bandgap for any intended application can be achieved through the interplay of the effects of alloying, ordering, and domain structure engineering.

Direct bandgap photoluminescence from n-type indirect GaInP alloys

“…Previous studies have provided detailed information on the electronic structures of Ga x In 1−x P alloys (0 ≤ x ≤ 1) [4,5]. The experimental results showed that the luminescence efficiency of Ga x In 1−x P-based LED degrades significantly for emission wavelengths shorter than 590 nm (2.1 eV) [6].…”

Epitaxy and characterization of AlGaInP-based LEDs on Si substrates for visible-spectrum light emission

“…Due to the weak luminescence emission, studies on the optical properties of GaxIn1-xP alloys near the direct-indirect band crossover and at the indirect band region are more challenging than studies on direct band alloys. In addition, the lack of latticematched substrates and the ordering effect add more complexity to the studies.Previous studies have provided detailed information on the electronic structures of GaxIn1-xP alloys (0 ≤ x ≤ 1)[81,82]. It was found that the carrier confinement was more difficult for GaxIn1-xP alloys as the Ga content increased[83].…”