TCAD Simulation of Single-Event-Transient Effects in L-Shaped Channel Tunneling Field-Effect Transistors

Wang, Qianqiong; Liu, Hongxia; Wang, Shulong; Chen, Shupeng

doi:10.1109/tns.2018.2851366

Cited by 52 publications

(28 citation statements)

References 38 publications

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“…The collected charge enters the saturation region after exponential increase. According to [8], for MOSFET, Q coll increase slowly after exponential growth, which are different from TFET in this study. This disparity may suggest that the bipolar amplification effect is ubiquitous in MOSFET, but the bipolar amplification effect of DG-FeTFET is ignorable (the value of bipolar amplification effect is less than 1), as shown in Figure 1(e).…”

mentioning

confidence: 55%

Single-event-transient effects in silicon-on-insulator ferroelectric double-gate vertical tunneling field effect transistors

Tian

et al. 2020

Sci. China Inf. Sci.

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mentioning

confidence: 55%

Single-event-transient effects in silicon-on-insulator ferroelectric double-gate vertical tunneling field effect transistors

Tian

et al. 2020

Sci. China Inf. Sci.

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“…This side effect brought by the high

κ

dielectric is inevitable, but the application of HGD structure only changes the vertical gate dielectric to high

κ

dielectric, and the horizontal gate dielectric still employs low

κ

dielectric. It has been demonstrated that HGD structure not only reduces the side effect of high

κ

dielectric but also effectively suppresses the ambipolar effect [14, 15].…”

Section: Resultsmentioning

confidence: 99%

“…By transforming the path of BTBT from point‐tunnelling to line‐tunnelling, an L‐shaped TFET (LTFET) has been proposed and it was experimentally demonstrated that LTFET could provide >1000 times higher

I_{normalON}

than conventional planar TFET [12, 13]. Recently, various techniques along with process methods have been investigated for further improving the performance of LTFET, such as lightly doped drain for better suppression of ambipolar current [14], source and pocket layer for a higher

I_{normalON}

[15, 16], and heterogeneous gate dielectric (HGD) structure for improved analogue/RF performance [17, 18].…”

Section: Introductionmentioning

confidence: 99%

Analysis of interface trap charges on performance variation in L‐shaped tunnel field‐effect transistor

Guo

Liu

Yan

et al. 2019

Micro & Nano Letters

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The L-shaped tunnel field-effect transistor (LTFET) improves current drivability significantly by transforming the path of the band-to-band tunnelling from point-tunnelling to line-tunnelling, but meanwhile, the gate-source overlapped structure of LTFET brings about a larger active area of interface trap charges (ITCs). In this paper, the impact of ITCs on LTFET's characteristics is investigated in terms of the electric field, dc, analogue/RF, linearity and transient performance. From TCAD simulation results, it is found that for conventional LTFET, different types of ITCs lead to distinct variations in I-V characteristics, subthreshold swing, transconductance, parasitic capacitances, cutoff frequency, linearity parameters such as V IP2 , V IP3 , I IP3 , and I MD3 and the fall propagation delay (t pHL). To improve the device stability, heterogeneous gate dielectric (HGD) structure is introduced into LTFET. From comparison results, it is found that benefiting from the improved gate controllability near the tunnelling junction, HGD-LTFET not only improves dc, analogue/RF, linearity and transient performance but also effectively suppresses the variation caused by ITCs thus has better stability. Therefore, HGD-LTFET is a very attractive choice in future low-power and high-frequency applications.

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“…Hence, the nonlocal BTBT model was adopted in this study. The rate of the BTBT tunneling is expressed as:

where E 0 = 1 V/cm, P = 2.5, A = 4 × 10 14 /cm 3 ∙s and B = 9.9 × 10 6 V/cm (the values of E 0 and P are default values and the values of parameters A and B are obtained through model calibration [ 24 ]).…”

Section: Device Structures and Simulation Approachmentioning

confidence: 99%

Sensitivity Analysis of Biosensors Based on a Dielectric-Modulated L-Shaped Gate Field-Effect Transistor

et al. 2020

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Label-free biomolecular sensors have been widely studied due to their simple operation. L-shaped tunneling field-effect transistors (LTFETs) are used in biosensors due to their low subthreshold swing, off-state current, and power consumption. In a dielectric-modulated LTFET (DM-LTFET), a cavity is trenched under the gate electrode in the vertical direction and filled with biomolecules to realize the function of the sensor. A 2D simulator was utilized to study the sensitivity of a DM-LTFET sensor. The simulation results show that the current sensitivity of the proposed structure could be as high as 2321, the threshold voltage sensitivity could reach 0.4, and the subthreshold swing sensitivity could reach 0.7. This shows that the DM-LTFET sensor is suitable for a high-sensitivity, low-power-consumption sensor field.

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TCAD Simulation of Single-Event-Transient Effects in L-Shaped Channel Tunneling Field-Effect Transistors

Cited by 52 publications

References 38 publications

Single-event-transient effects in silicon-on-insulator ferroelectric double-gate vertical tunneling field effect transistors

Single-event-transient effects in silicon-on-insulator ferroelectric double-gate vertical tunneling field effect transistors

Analysis of interface trap charges on performance variation in L‐shaped tunnel field‐effect transistor

Sensitivity Analysis of Biosensors Based on a Dielectric-Modulated L-Shaped Gate Field-Effect Transistor

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