Proceedings of 1994 IEEE International Electron Devices Meeting
DOI: 10.1109/iedm.1994.383442
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TCAD strategy for predictive VLSI memory development

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Cited by 7 publications
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“…P REDICTIVE technology in computer aided design (TCAD) has been shown to be a powerful tool for the development of low-voltage CMOS and VLSI memory technology development [1], [2] as well as for the development of mixed-mode and complex technologies such as the Smart Power ones [3]. There is a strong economical incentive for extrapolative quantitatively accurate TCAD capabilities, even if only possible under some restrictions.…”
Section: Introductionmentioning
confidence: 99%
“…P REDICTIVE technology in computer aided design (TCAD) has been shown to be a powerful tool for the development of low-voltage CMOS and VLSI memory technology development [1], [2] as well as for the development of mixed-mode and complex technologies such as the Smart Power ones [3]. There is a strong economical incentive for extrapolative quantitatively accurate TCAD capabilities, even if only possible under some restrictions.…”
Section: Introductionmentioning
confidence: 99%