Temperature Dependence of Field-Emission Characteristics from a p-Type Si Single Emitter with Real Surface

Abstract

The electrical and optical characteristics of indium-doped Se 2 Sb 2 Te 6 phase-change alloy are studied in this paper. It is found that adding indium to Se 2 Sb 2 Te 6 alloy increases its amorphous-crystalline transition temperature, T C , and reduces the electrical conduction activation energy. The capacitance-temperature measurements showed a drastic change in the capacitance of the modified film as the temperature approaches T C and eventually the capacitance becomes negative and nonlinear. The negativity and nonlinearity in the capacitance-voltage dependence can be attributed to the growth of conductive crystalline islands with increasing temperature.

Field Emission from a P-Type Silicon Single Emitter Sharpened by Focused Ion Beam Milling

“…The emission current from a p-type Si emitter is known to be saturated at high applied voltages. [1][2][3][4] The saturation is considered to occur because the emission current is restricted by the number of electrons present in the conduction band generated from the surface state in the middle of the energy gap. 4) A gentle slope was commonly observed in the Fowler-Nordheim (FN) plots owing to the saturation of the emission current.…”

“…[1][2][3][4] The saturation is considered to occur because the emission current is restricted by the number of electrons present in the conduction band generated from the surface state in the middle of the energy gap. 4) A gentle slope was commonly observed in the Fowler-Nordheim (FN) plots owing to the saturation of the emission current. It was remarkable that the emission current obtained in this region of the FN plots was extremely stable.…”

Field-Emission Characteristics of Carbon Nanotube Single Tip Grown on Si Cone

“…If the emission current was limited by the generation rate of the electrons as is observed with a p-type semiconductor tip, the temperature dependence of the emission current should be observed. 9,10) Thus, the temperature dependence of the emission current is a good indicator of the conduction type of the materials. The substrate (AFM cantilever) used in this experiment was ntype Si.…”