Temperature Dependence of High Frequency Noise Behaviors for RF MOSFETs

IEEE Trans. Electron Devices

et al. 2012

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The temperature dependence of high-frequency noise characteristics for deep-submicrometer bulk and silicon-oninsulator (SOI) MOSFETs has been experimentally examined in this paper. With the downscaling of the channel length, our paper indicates that the power spectral density of the channel noise (S id ) of the bulk MOSFET becomes less sensitive to temperature due to the smaller degradation of the channel conductance at zero drain bias g d0 as temperature rises. We also show that the SOI-specific floating-body and self-heating effects would result in higher white-noise gamma factor. Finally, for both the bulk and SOI MOSFETs, since transconductance g m significantly decreases as temperature increases, their minimum noise figure NF min and equivalent noise resistance R n would degrade with increasing temperature.

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Section: High-frequency Noise Characterizationmentioning

confidence: 86%

Section: Introductionmentioning

confidence: 99%

Investigation of Temperature-Dependent High-Frequency Noise Characteristics for Deep-Submicrometer Bulk and SOI MOSFETs

IEEE Trans. Electron Devices

et al. 2012

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“…6, and is usually expressed as follows [14]: (5) where J/K is the Boltzmann constant, is the ambient temperature in kelvin, is the channel conductance at zero drain-source voltage, and is the noise factor. Besides, [15] has shown that has a weak temperature dependence, and the temperature dependence of is dominated by that of and . Fig.…”

Section: A Channel Noise and Equivalent Thermal Resistancementioning

confidence: 99%

Temperature-Dependent RF Small-Signal and Noise Characteristics of SOI Dynamic Threshold Voltage MOSFETs

IEEE Trans. Microwave Theory Techn.

et al. 2010

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In this paper, temperature-dependent RF small-signal and noise characteristics of silicon-on-insulator (SOI) dynamic threshold voltage (DT) MOSFETs are experimentally examined. In the low-voltage regime, both the cutoff and maximum oscillation frequencies ( and max ) tend to increase with temperature.In addition, the inherent body-related parasitics and the series resistance have much more impact on max than . Besides, we found that the noise stemmed from the body resistance ( ) would contribute to the output noise current, and degrade the minimum noise figure (NF min ). Our study may provide insights for RF circuit design using advanced SOI DT MOSFETs. Index Terms-Body resistance, dynamic threshold voltage (DT)MOSFETs, noise, RF, silicon-on-insulator (SOI), small signal, temperature dependence. where he is involved with RF-related technologies. His current research focuses on advanced mixed-mode and RF CMOS design including device modeling, noise characterization, power behavior, and reliability studies.

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Investigation of High-Frequency Noise Characteristics in Tensile-Strained nMOSFETs

IEEE Trans. Electron Devices

et al. 2011