Temperature dependence of the piezoresistance effects of p‐type silicon diffused layers

Yamada, Kotaro; Nishihara, Motohisa; Shimada, Satoshi; Tanabe, M.; Shimazoe, Michitaka

doi:10.1002/eej.4391030503

Cited by 9 publications

(4 citation statements)

References 9 publications

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“…in Equation (3) account for the TCRs of the piezoresistive element. It is reported [ 20 , 22 , 32 ] that the first order TCR ( α 1 ) has a higher influence on the thermal response of piezoresistors than higher order TCRs ( α 2 , α 3 ,…. ).…”

Section: Sensor Design and Modelingmentioning

confidence: 99%

“…Moreover, it was determined that α 1 is the same for different crystal orientations [ 36 , 37 ]. In addition, in the case of heavily doped piezoresistors, (

, …) have a minor contribution to the results [ 20 , 22 , 30 – 32 ].…”

Section: Sensor Design and Modelingmentioning

confidence: 99%

“…It is well known that increasing dopant concentration reduces the sensor thermal drift [ 19 – 32 ] by stabilizing the values of the piezoresistive coefficients. On the other hand, the increase in dopant concentration also decreases the sensor sensitivity significantly.…”

Section: Introductionmentioning

confidence: 99%

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High-Performance Piezoresistive MEMS Strain Sensor with Low Thermal Sensitivity

Mohammed

Moussa

Lou

2011

Sensors

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This paper presents the experimental evaluation of a new piezoresistive MEMS strain sensor. Geometric characteristics of the sensor silicon carrier have been employed to improve the sensor sensitivity. Surface features or trenches have been introduced in the vicinity of the sensing elements. These features create stress concentration regions (SCRs) and as a result, the strain/stress field was altered. The improved sensing sensitivity compensated for the signal loss. The feasibility of this methodology was proved in a previous work using Finite Element Analysis (FEA). This paper provides the experimental part of the previous study. The experiments covered a temperature range from −50 °C to +50 °C. The MEMS sensors are fabricated using five different doping concentrations. FEA is also utilized to investigate the effect of material properties and layer thickness of the bonding adhesive on the sensor response. The experimental findings are compared to the simulation results to guide selection of bonding adhesive and installation procedure. Finally, FEA was used to analyze the effect of rotational/alignment errors.

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Section: Sensor Design and Modelingmentioning

confidence: 99%

“…Moreover, it was determined that α 1 is the same for different crystal orientations [ 36 , 37 ]. In addition, in the case of heavily doped piezoresistors, (

, …) have a minor contribution to the results [ 20 , 22 , 30 – 32 ].…”

Section: Sensor Design and Modelingmentioning

confidence: 99%

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High-Performance Piezoresistive MEMS Strain Sensor with Low Thermal Sensitivity

Mohammed

Moussa

Lou

2011

Sensors

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show abstract

“…Moreover, the magnitudes of the three piezoresistive coefficients vary with the operating temperature and doping level [14]. At constant doping level, it is documented that π 44 is independent of temperature and increasing doping concentration reduces the sensor thermal drift [15][16][17].…”

Section: Fig 1 Direction Of Resistors and Crystallographic Directionmentioning

confidence: 99%

Miniature Stress Test of Miniature Components Based on Piezoresistive Stress Sensors Test Circuit

Wang

Qin

Luo

2014

KEM

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In this work, piezoresistive stress sensors test circuit fabricated into the sensitive structure as part of the normal processing procedure is used to measure the stresses difference distribution before and after the assembly. Sensor resistances were recorded before and after the adhesive bonding. Using the theoretical equations, the stresses on the die surface have been calculated from the data of sensor resistances. This technology not only provides a performance diagnostic tool for the sensitive structures and the miniature components, but also presents a design tool for low-stress micro-assemblies of miniature components.

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CMOS‐based Pressure Sensors

Timme

2005

Advanced Micro and Nanosystems

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Temperature dependence of the piezoresistance effects of p‐type silicon diffused layers

Cited by 9 publications

References 9 publications

High-Performance Piezoresistive MEMS Strain Sensor with Low Thermal Sensitivity

High-Performance Piezoresistive MEMS Strain Sensor with Low Thermal Sensitivity

Miniature Stress Test of Miniature Components Based on Piezoresistive Stress Sensors Test Circuit

CMOS‐based Pressure Sensors

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