Temperature-dependent threshold and modulation characteristics in InGaAs/GaAs quantum-well ridge-waveguide lasers

Hu, S. Y.; Corzine, S.; Chuang, Z.M.; Law, K.‐K.; Young, D.B.; Gossard, A. C.; Coldren, L.A.; Merz, J. L.

doi:10.1063/1.113685

Cited by 19 publications

(4 citation statements)

References 11 publications

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“…This simple model including its recent modifications 4,5 have been frequently used for device design purposes. [6][7][8][9][10][11] Erman's model, 12 based on the damped harmonic oscillator ͑DHO͒ approximation, has been widely used to calculate the optical dielectric function verses frequency and alloy composition [12][13][14][15] and to model the temperature dependence of the optical dielectric function [16][17][18][19] at energies well above the first CP energy E 0 . Most recently the same model has been used in modelling apparent optical dielectric function of strained films.…”

Section: Introductionmentioning

confidence: 99%

Modeling the optical dielectric function of GaAs and AlAs: Extension of Adachi’s model

Rakić

Majewski

1996

Journal of Applied Physics

139

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Optical dielectric function model of Ozaki and Adachi ͓J. Appl. Phys. 78, 3380 ͑1995͔͒ is augmented by introducing Gaussian-like broadening function instead of Lorentzian broadening. In this way a consistent and comparatively simple analytic formula has been obtained, which accurately describes the optical dielectric function of GaAs and AlAs in a wide spectral range between 0.1 and 6 eV. The acceptance-probability-controlled simulated annealing technique was used to fit the model to experimental data.

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Section: Introductionmentioning

confidence: 99%

Modeling the optical dielectric function of GaAs and AlAs: Extension of Adachi’s model

Rakić

Majewski

1996

Journal of Applied Physics

139

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“…19) Because a lower T 0 corresponds to an enhancement of the band filling effect, the low temperature coefficient of a lasing wavelength and the high T 0 exhibit a trade-off relationshipa lower T 0 corresponds to a low temperature coefficient of a lasing wavelength. The temperature coefficients of 1.3 µm InGaAsP FP-LDs 19) with a T 0 of 60 K and 1.0 µm InGaAs/GaAs quantum-well LDs 20) have been reported to be 0.40 and 0.345 nm/K, respectively. The temperature coefficient of the GaAs 0.97 Bi 0.03 FP-LD with a T 0 of 125 K is 0.17 nm/K.…”

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Electrically pumped room-temperature operation of GaAs₁₋_xBi_xlaser diodes with low-temperature dependence of oscillation wavelength

Fuyuki

Yoshida

Yoshioka

et al. 2014

Appl. Phys. Express

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Lasing oscillation at wavelengths up to 1045 nm at room temperature has been realized from GaAs1−xBix Fabry–Perot laser diodes (FP-LDs) by electrical injection, and the temperature characteristics of GaAs1−xBix FP-LDs are revealed for the first time. The characteristic temperature T0 of the GaAs0.97Bi0.03 FP-LD in the temperature range between 15 and 40 °C (T0 = 125 K) is similar to that reported for typical 0.98 µm InGaAs/GaAs LDs. The temperature coefficient of the lasing wavelength in GaAs0.97Bi0.03 FP-LDs is reduced to 0.17 nm/K, which is only 45% of that of GaAs FP-LDs.

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“…Our considerations have been exemplified for the typical 980 nm InGaAs/GaAs quantum-well (QW) laser, for which we previously calculated the threshold currents as a function of pressure and temperature [5]. Pressure and temperature have been widely used for the characterization of LDs [6][7][8][9], allowing to identify different recombination mechanisms. However, in the present paper we concentrate on the application of pressure and temperature as external variables that allow for tuning the emission wavelength.…”

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Pressure and temperature dependence of gain in InGaAs/GaAs laser diode

Bajda

Piechal

Dybała

et al. 2011

Physica Status Solidi (b)

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Wavelength dependent gain has been calculated for InGaAs/ GaAs quantum-well (QW) lasers as a function of hydrostatic pressure and temperature. The shift of the gain maximum for such laser is equal to À140 nm by increasing the pressure up to 20 kbar and À60 nm by cooling down from 300 to 100 K. The width of the gain curve (determining the possible tuning range with external grating) is significantly reduced at low temperatures and (to a lower extent) at high pressures. Our results indicate that pressure tuning is much more effective than temperature tuning when combined with tuning by external grating.1 Introduction Laser diodes (LDs) can be wavelength tuned in the external resonator [1,2] by forcing the laser to oscillate at a frequency determined by some external reflector (diffraction grating, fiber Bragg reflector, etc.) The available tuning range is determined by the width of the positive net gain. The other possible tuning method consists in shifting the whole gain curve by external parameters like pressure or temperature. These methods can be combined, i.e., pressure/temperature tuning can be performed for the external cavity laser tuned by the grating [3,4]. This allows for very wide tuning range with single-mode operation and good beam quality. It turns out that the laser tuning by pressure/temperature may increase the range obtained by the grating. However, it is important to determine how the width (and shape) of the gain curve changes with pressure or with temperature, which has been the purpose of the present paper. Our considerations have been exemplified for the typical 980 nm InGaAs/GaAs quantum-well (QW) laser, for which we previously calculated the threshold currents as a function of pressure and temperature [5]. Pressure and temperature have been widely used for the characterization of LDs [6-9], allowing to identify different recombination

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Temperature-dependent threshold and modulation characteristics in InGaAs/GaAs quantum-well ridge-waveguide lasers

Abstract: Extraordinarily wide optical gain spectrum in 2.2-2.5 μm In(Al)GaAsSb/GaSb quantum-well ridge-waveguide lasers J. Appl. Phys. 90, 4281 (2001); 10.1063/1.1391421 Lateral carrier diffusion and surface recombination in InGaAs/AlGaAs quantumwell ridgewaveguide lasers

Cited by 19 publications

References 11 publications

Modeling the optical dielectric function of GaAs and AlAs: Extension of Adachi’s model

Modeling the optical dielectric function of GaAs and AlAs: Extension of Adachi’s model

Electrically pumped room-temperature operation of GaAs₁₋_xBi_xlaser diodes with low-temperature dependence of oscillation wavelength

Pressure and temperature dependence of gain in InGaAs/GaAs laser diode

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Temperature-dependent threshold and modulation characteristics in InGaAs/GaAs quantum-well ridge-waveguide lasers

Abstract: Extraordinarily wide optical gain spectrum in 2.2-2.5 μm In(Al)GaAsSb/GaSb quantum-well ridge-waveguide lasers J. Appl. Phys. 90, 4281 (2001); 10.1063/1.1391421 Lateral carrier diffusion and surface recombination in InGaAs/AlGaAs quantumwell ridgewaveguide lasers

Cited by 19 publications

References 11 publications

Modeling the optical dielectric function of GaAs and AlAs: Extension of Adachi’s model

Modeling the optical dielectric function of GaAs and AlAs: Extension of Adachi’s model

Electrically pumped room-temperature operation of GaAs1−xBixlaser diodes with low-temperature dependence of oscillation wavelength

Pressure and temperature dependence of gain in InGaAs/GaAs laser diode

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Electrically pumped room-temperature operation of GaAs₁₋_xBi_xlaser diodes with low-temperature dependence of oscillation wavelength