Temperature diagnostics for a dual-arc FRTP tool

Stuart, G.C.; Camm, D. M.; Cibere, J.; Kaludjercic, L.; Kervin, S.L.; Lu, Binxian; McDonnell, Karen; Tam, N. H.

doi:10.1109/rtp.2002.1039443

Cited by 10 publications

(6 citation statements)

References 2 publications

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“…In addition, the use of an insulated-gate bipolar transistor can shape the original pulse to the needs of the annealing treatment, e.g. to shorten the pulse [28] or to achieve a certain short plateau of constant temperature [29]. The two main parameters to characterize the pulse are the pulse duration and the energy density.…”

Section: Flash Lampsmentioning

confidence: 99%

“…In order to eliminate the flash light background, the diagnostic wavelength of the temperature measurement can be filtered out from the flash lamp spectrum. This can be achieved, e.g., by using water [29] or hydroxylated synthetic quartz glass windows [37,38]. There are a couple of alternative, but less common, methods other than pyrometry, such as the thermawave technique [39] and polaradiometry [40].…”

Section: Temperature Distributionsmentioning

confidence: 99%

“…In summary, with a corresponding elaborated effort, fast in situ temperature measurement during FLA is possible, and it can be even used to instantaneously adjust the lamp current in order to obtain a short temperature plateau instead of a temperature peak [29]. However, in most cases the temperature is determined ex situ by calibration and/or simulation.…”

Section: Temperature Distributionsmentioning

confidence: 99%

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A review of thermal processing in the subsecond range: semiconductors and beyond

Rebohle

Prucnal

Skorupa

2016

Semicond. Sci. Technol.

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Thermal processing in the subsecond range comprises modern, non-equilibrium annealing techniques which allow various material modifications at the surface without affecting the bulk. Flash lamp annealing (FLA) is one of the most diverse methods for short-time annealing with applications ranging from the classical field of semiconductor doping to the treatment of polymers and flexible substrates. It still continues to extend its use to other material classes and applications, and is becoming of interest for an increasing number of users. In this review we present a short, but comprehensive and consistent picture of the current state-of-the-art of FLA, sometimes also called pulsed light sintering. In the first part we take a closer look at the physical and technological background, namely the electrical and optical specifications of flash lamps, the resulting temperature profiles, and the corresponding implications for process-relevant parameters such as reproducibility and homogeneity. The second part briefly considers the various applications of FLA, starting with the classical task of defect minimization and ultrashallow junction formation in Si, followed by further applications in Si technology, namely in the fields of hyperdoping, crystallization of thin amorphous films, and photovoltaics. Subsequent chapters cover the topics of doping and crystallization in Ge and silicon carbide, doping of III-V semiconductors, diluted magnetic semiconductors, III-V nanocluster synthesis in Si, annealing of transparent conductive oxides and high-k materials, nanoclusters in dielectric matrices, and the use of FLA for flexible substrates.

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Section: Flash Lampsmentioning

confidence: 99%

Section: Temperature Distributionsmentioning

confidence: 99%

Section: Temperature Distributionsmentioning

confidence: 99%

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A review of thermal processing in the subsecond range: semiconductors and beyond

Rebohle

Prucnal

Skorupa

2016

Semicond. Sci. Technol.

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“…Without front side temperature measurement, such variations would not be discovered. Front side temperature measurement has been demonstrated in flash lamp MSA tools [5]. The use of a very fast radiometer allows such measurements to be made reliably.…”

Section: Msa Approachesmentioning

confidence: 99%

An Overview of ms Annealing for Deep Sub-Micron Activation

Gelpey¹,

McCoy²,

Camm³

et al. 2008

MSF

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Millisecond annealing (MSA) has been developed over the last several years as a viable approach to achieve the high electrical activation, limited diffusion and high abruptness needed for junctions in the sub-65nm regime. This paper will provide an overview of the technology including the motivation, technology and some process results. Both main approaches for MSA, sub-melt laser and flash lamp annealing will be discussed as well as the potential challenges to bring these technologies into mainstream manufacturing.

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“…It is necessary for the manufacture of LSI with MSA to evaluate and suppress the temperature variation that depends on micro emissivity non-uniformity in MSA. MSA technique have been released such as laser spike annealing (LSA), flash lamp annealing (FLA) and flash-assist RTPTM (fRTPTM), whose energy source are the CO2 laser, Xe arc flash lamp and Ar arc flash lamp respectively [4][5][6]. FLA was applied as MSA technique because wavelength range 300-800 nm of Xe arc flash lamp is similar to the dimension of device structure and the emissivity fluctuation was caused by the scattering and interference of irradiation light from Xe arc flash lamp by the pattern of devices.…”

Section: Introductionmentioning

confidence: 99%

First Quantitative Observation of Local Temperature Fluctuation in Millisecond Annealing

Kubo

Sukegawa

Takii

et al. 2007

2007 15th International Conference on Advanced Thermal Processing of Semiconductors

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We report, for the first time, a detailed study of the 100 ptm-scaled emissivity and temperature variation in millisecond annealing (MSA) depending on the Si trench structure, the shallow trench isolation (STI) structure, and transistor structure measured by Thermawave method. Flash lamp annealing (FLA) was applied as MSA technique. In case of Si trench structure with varying the trench depth, the relation between the trench depth and emissivity was clarified quantitatively. It was found that micro temperature variation within a chip driven by the emissivity variation exceeds of 100°C as the transistor structure was annealed by FLA.

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Temperature diagnostics for a dual-arc FRTP tool

Cited by 10 publications

References 2 publications

A review of thermal processing in the subsecond range: semiconductors and beyond

A review of thermal processing in the subsecond range: semiconductors and beyond

An Overview of ms Annealing for Deep Sub-Micron Activation

First Quantitative Observation of Local Temperature Fluctuation in Millisecond Annealing

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