TeO_X-Based Film for Heat-Mode Inorganic Photoresist Mastering

Abstract

A TeOX-based inorganic photoresist was developed for mastering utilizing heat-mode recording. We discovered that the novel organic thermal isolation film markedly improved the patterning resolution of phase change mastering. We demonstrated Blu-ray Disc read only memory (ROM) mastering with a blue laser diode, using the TeOX-based photoresist and the thermal isolation film. The jitter values of a replicated disc were less than 6% at the full range of the disc. It was also proven that the mastering system is capable of recording 80 nm L/S. In addition, the mechanism of development was clarified.

Laser precision engineering: from microfabrication to nanoprocessing

“…As a result, the precision of the shape and size for small-size data pits becomes difficult due to their intrinsic accumulation effects of the light absorption on the photoresists. In order to overcome these difficulties, recently a new laser thermal lithography (LTL) technology was proposed and demonstrated, which uses inorganic materials as resist and a laser beam as a heat source [78][79][80][81][82][83][84][85][86][87]. The technology is based on the fact that the etch rates for irradiated and unirradiated areas are different.…”

Selective etching characteristics of the AgInSbTe phase-change film in laser thermal lithography

“…Compared with organic resist materials, inorganic resist materials generally exhibit a high resolution and a clear, regular, and steep edge profile at the boundary after etching due to their light molecular weight and narrow temperature change transition region [7,8]. In recent years, several inorganic resist materials, which include phase-change films, such as Ge-Sb-Te, Te-O, ZnS-SiO 2 or Ge-Sb-Sn-O, and metal oxide films, such as W-O or Mo-O, have been developed [2,3,[9][10][11]. Clear pattern profile and regular pits or dots on the Te-O and ZnS-SiO 2 phase-change films are obtained.…”

Enhancing nanoscale patterning on Ge–Sb–Sn–O inorganic resist film by introducing oxygen during blue laser-induced thermal lithography

“…The heat from laser beam can alter the phase of the resist material from amorphous to crystalline. A crystalline state can be obtained by etching with alkaline or acid solution more easily than can an amorphous state [6]. The development process can yield nanoscale structures.…”

“…In recent years, various inorganic resist materials, including phase-changing materials, Te-O or Sb-O, and metal oxides, W-O or Mo-O, have been developed [6][7][8]. Inorganic resists are preferred because the molecular weight of an organic resist exceeds * Corresponding author.…”