TEOS-based PECVD of silicon dioxide for VLSI applications

Ray, S. K.; Maiti, C. K.; Lahiri, S. K.; Chakrabarti, N.B.

doi:10.1002/(sici)1099-0712(199603)6:2<73::aid-amo215>3.0.co;2-r

Cited by 41 publications

(34 citation statements)

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“…Some plasma-enhanced CVD (PECVD) techniques allow processing at low temperatures without inducing strong residual stresses in the films. Several studies using low-pressure PECVD processes have been performed on the conformity of the deposited coatings with different organosilicon precursors [3], [4], [6], [11]- [18]. These previous results have demonstrated the influence of operating parameters.…”

Section: Introductionmentioning

confidence: 57%

“…Chemical vapor deposition (CVD) processes allow the production of highly conformal silicon glass films using organosilicon precursors such as tetraethoxysilane [7]- [10]. This precursor, and generally every organosilicon compounds, indeed, provides better conformal step and trench filling compared to silane/O 2 mixtures [6], [11]. This trend is usually explained by a better diffusion at the surface of the adsorbed organosilicon molecules [3], [11], [12].…”

Section: Introductionmentioning

confidence: 99%

“…This precursor, and generally every organosilicon compounds, indeed, provides better conformal step and trench filling compared to silane/O 2 mixtures [6], [11]. This trend is usually explained by a better diffusion at the surface of the adsorbed organosilicon molecules [3], [11], [12]. CVD is, however, performed at elevated temperatures and, therefore, is not suitable as a deposition process on temperature-sensitive substrates such as OLEDs.…”

Section: Introductionmentioning

confidence: 99%

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Conformity of Silica-like Thin Films Deposited by Atmospheric Pressure Townsend Discharge and Transport Mechanisms

Larclause

Paulmier

Enache

et al. 2009

IEEE Trans. Plasma Sci.

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In this paper, homogeneous and dense silicon-based coatings have been deposited from hexamethyldisiloxane (HMDSO: Si 2 O(CH 3 ) 6 ) on patterned silicium in a Townsend dielectric barrier discharge operating at atmospheric pressure. A brief description of the physical mechanisms ruling the step coverage is first described, followed by a description of the atmospheric pressure plasma process used. The step coverage is discussed with regard to the aspect ratio of the patterned wafers. Coatings deposited in and after the discharge region have also been characterized to understand the influence of plasma activation. In order to understand the experimental results, numerical simulations have been performed using a simplified reactive transport model. These results provide information and first general insight on the physical mechanisms ruling the conformity of silicon-based films deposited with this technique.Index Terms-Atmospheric pressure Townsend discharge (APTD), dielectric barrier discharge (DBD), glow discharges, plasma-enhanced chemical vapor deposition (PECVD), reactive transport modeling, silicon oxide, step coverage.

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Section: Introductionmentioning

confidence: 57%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Conformity of Silica-like Thin Films Deposited by Atmospheric Pressure Townsend Discharge and Transport Mechanisms

Larclause

Paulmier

Enache

et al. 2009

IEEE Trans. Plasma Sci.

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“…Chemical vapour deposition (CVD) techniques are commonly used to deposit dielectric films due to their superior step coverage over physical vapour deposition processes. The plasma enhanced CVD (PECVD) process has a distinct advantage over other thermal CVD methods in which a high deposition rate can be achieved at a low substrate temperature (Ray et al 1996;Raoux et al 1997).…”

Section: Introductionmentioning

confidence: 99%

Structural and optical properties of ZnO films grown on silicon and their applications in MOS devices in conjunction with ZrO2 as a gate dielectric

et al. 2007

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Photoluminescence (PL) properties of undoped ZnO thin films grown by rf magnetron sputtering on silicon substrates have been investigated. ZnO/Si substrates are characterized by Rutherford backscattering (RBS), X-ray diffraction (XRD), Fourier transform infrared (FTIR), and X-ray photoelectron spectroscopy (XPS). ZrO 2 thin films have been deposited on ZnO using microwave plasma enhanced chemical vapour deposition at a low temperature (150°C). Using metal insulator semiconductor (MIS) capacitor structures, the reliability and the leakage current characteristics of ZrO 2 films have been studied both at room and high temperatures. Schottky conduction mechanism is found to dominate the current conduction at a high temperature. Good electrical and reliability properties suggest the suitability of deposited ZrO 2 thin films as an alternative as gate dielectric on ZnO/n-Si heterostructure for future device applications.

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“…SiO 2 films prepared using this technique can be used as passivation layers, for interlayer isolation, and as lithographic masks, and they can potentially be used as gate dielectrics for thin film transistor (TFT) applications. The reasons for these uses are that they exhibit good step coverage as well as desirable electrical and mechanical properties (Ray et al 1996). However, because of the low deposition rate of SiO 2 films by a TEOS plasma, efforts have been made to increase the deposition rate to meet manufacturing requirements (DeCrosta et al 1996).…”

Section: Introductionmentioning

confidence: 99%

Incorporation of Dust Particles into a Growing Film During Silicon Dioxide Deposition from a TEOS/O₂Plasma

Setyawan

Hayashi

Kashihara

et al. 2005

Aerosol Science and Technology

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The effects of gas flow rate on particle formation and film deposition during the preparation of silica thin film using a TEOS/O 2 plasma were investigated. Particle formation and growth are suppressed with increasing gas flow rates. The film deposition rate increases with increasing gas flow rate, reaches a maximum value, and eventually decreases again. However, the uniformity of the film tends to degrade at high gas flow rates. At a high gas flow rate, some particles trapped in the sheath near the grounded electrode pass through the sheath to reach the substrate and are then embedded in the growing film. A self-consistent sheath model combined with particle force balance based on charge fluctuation was developed to explain these experimental findings qualitatively. The model reveals that charge fluctuation is a key factor for the particle to overcome the potential barrier of the negatively charged particles to pass through the sheath, eventually reaching the substrate. The model further shows that the probability of a particle being deposited on the substrate is higher for increased gas flow rates, which correctly predicts the experimentally observed trend.

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TEOS-based PECVD of silicon dioxide for VLSI applications

Cited by 41 publications

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Conformity of Silica-like Thin Films Deposited by Atmospheric Pressure Townsend Discharge and Transport Mechanisms

Conformity of Silica-like Thin Films Deposited by Atmospheric Pressure Townsend Discharge and Transport Mechanisms

Structural and optical properties of ZnO films grown on silicon and their applications in MOS devices in conjunction with ZrO2 as a gate dielectric

Incorporation of Dust Particles into a Growing Film During Silicon Dioxide Deposition from a TEOS/O₂Plasma

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TEOS-based PECVD of silicon dioxide for VLSI applications

Cited by 41 publications

References 0 publications

Conformity of Silica-like Thin Films Deposited by Atmospheric Pressure Townsend Discharge and Transport Mechanisms

Conformity of Silica-like Thin Films Deposited by Atmospheric Pressure Townsend Discharge and Transport Mechanisms

Structural and optical properties of ZnO films grown on silicon and their applications in MOS devices in conjunction with ZrO2 as a gate dielectric

Incorporation of Dust Particles into a Growing Film During Silicon Dioxide Deposition from a TEOS/O2Plasma

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Incorporation of Dust Particles into a Growing Film During Silicon Dioxide Deposition from a TEOS/O₂Plasma