Test bench for thermal cycling of 10 kV silicon carbide power modules

Sonderskov, Simon Dyhr; Jorgensen, Asger Bjom; Maarbjerg, A. E.; Frederiksen, K. L.; Munk-NieW, S.; Bęczkowski, Szymon; Uhrenfeldt, Christian

doi:10.1109/epe.2016.7695328

Cited by 3 publications

(3 citation statements)

References 8 publications

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“…Boost converter demonstrators by Vechalapu et al [29], Wang et al [30] and Thoma and Kranzer [31]. Inverter operation demonstrators by Das et al [33], Sønderskov et al [35], Wang et al [36] and Thoma et al [37]. The star point indicates the operating point for the experiment presented in this paper…”

Section: Experimental Results Of Resonant Operationmentioning

confidence: 99%

“…These devices are only available in bare die form, and recent research has been focused on the development of highvoltage packaging of such devices. Several research teams have investigated and demonstrated the fast switching capabilities of the 10 kV SiC MOSFETs mainly in hard-switched double-pulse tests [21][22][23][24][25], short-circuit characteristics [26][27][28], DC-DC converters [29][30][31][32] and inverter demonstrators with frequencies up to 40 kHz [33][34][35][36][37]. There has not yet been any documented attempts at operating 10-15 kV SiC devices in the MHz range.…”

Section: Introductionmentioning

confidence: 99%

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High‐frequency resonant operation of an integrated medium‐voltage SiC MOSFET power module

Jørgensen

Aunsborg

Bęczkowski

et al. 2020

IET Power Electronics

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Industrial processes which use induction and dielectric heating are still relying on resonant converters based on vacuum tubes. New emerging medium-voltage silicon carbide (SiC) semiconductor power devices have a potential to replace vacuum tubes and allow for more efficient and compact converters in the high-frequency range. High-voltage packages have been proposed in the literature that are suitable for the 10 kV SiC metal-oxide-semiconductor field-effect transistors (MOSFETS), and its fast voltage switching capabilities in hard-switched applications have been demonstrated. However, no packaging is presented which allows the high-frequency operation of a 10 kV SiC MOSFET die. This study proposes the design of a power module for MHz resonant operation of a 10 kV SiC MOSFET. At high switching frequencies, the gate losses become substantial, thus the gate driver is included inside the power module package to ensure a low inductive and high thermally conductive design as seen from the gate driver. The inductance of the proposed power module layout structure is evaluated using ANSYS Q3D Extractor. The thermal performance of the integrated gate-driver circuitry is experimentally verified. Finally, the resonant operation of a medium-voltage SiC MOSFET power module is demonstrated experimentally at 1 MHz.

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Section: Experimental Results Of Resonant Operationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

High‐frequency resonant operation of an integrated medium‐voltage SiC MOSFET power module

Jørgensen

Aunsborg

Bęczkowski

et al. 2020

IET Power Electronics

View full text Add to dashboard Cite

show abstract

“…An experimental test bench was designed to ensure robust operation during high voltage switching [12]. The SiC power modules are powered from custom designed gate driver supplies [13], due to high coupling capacitance in commercially available medium voltage DC-DC supplies [14]. Voltages of the half-bridge output and heat sink are measured as depicted in Fig.…”

Section: Experimental Validation Of Femmentioning

confidence: 99%