The barrier-height inhomogeneity in identically prepared H-terminated Ti/p-Si Schottky barrier diodes

Abstract

We have identically prepared as many as 60 Ti/p-Si (100) Schottky barrier diodes (SBDs) with a doping density of about 10 15 cm −3 . The Si (100)-H surfaces were obtained by wet chemical etching in diluted hydrofloric acid. We have made a statistical study related to the experimental barrier heights (BHs) and ideality factors of the diodes, and we have looked at linear relationship between BHs and ideality factors. The BHs obtained from the current-voltage (I-V) characteristics varied from 0.556 to 0.617 eV, and the ideality factor varied from 1.019 to 1.196. The experimental BH and ideality factor distributions obtained from the I-V characteristics were fitted by a Gaussian function, and their mean values were found to be 0.577 ± 0.013 eV and 1.098 ± 0.044, respectively. Furthermore, the homogeneous BH value of approximately 0.602 eV for the device was obtained from the linear relationship between experimental effective BHs and ideality factors.

Correlation Between Barrier Heights and Ideality Factors of Ni/n-Ge (100) Schottky Barrier Diodes

“…A laterally homogeneous BH value of 0.535 eV for the Ni/n-Ge (100) Schottky structures was obtained from the extrapolation of the plot to n = 1.0. The homogeneous BHs, rather than effective BHs, of individual contacts or their mean values should be used to discuss theories on the physical mechanisms that determine the BHs of MS contacts [27,43].…”

The analysis of lateral distribution of barrier height in identically prepared Co/n-Si Schottky diodes

“…Some authors have been able to account for much of the observed non-ideal behaviour by assuming certain distributions of microscopic barrier heights for the different diodes [4][5][6][7][8]10,[26][27][28], and pointed out that the BH inhomogeneity model would also explained the linear relationship between effective BHs and ideality factors that is often observed on sets of the identically prepared diodes [27][28][29][30][31][32][33][34][35]. It has been developed the idea that non-ideal behaviour in the Schottky barrier diodes (SBD) could be quantitatively explained by assuming specific distribution of nanometer-scale interfacial patches (small regions) with lower BH than the junction's main BH [27,28].…”

Determination of the laterally homogeneous barrier height of palladium Schottky barrier diodes on n-Ge (1 1 1)

“…A lateral homogeneous barrier height value of 0.558 eV for the Pd/nGe (1 1 1) Schottky structures was obtained from the extrapolation of the plot to n¼ 1.0. The homogeneous barrier heights rather than effective BHs of individual contacts or mean values should be used to discuss theories on the physical mechanisms that determine the BHs of MS contacts [29,35].…”

“…The homogeneous BH value for the Pd Schottky contacts was obtained from the linear relationship between the experimental effective BHs and ideality factors. The essence of this homogeneous BH is that, it depicts the real meaningful value characteristic of the MS systems [19], which should be used to develop theories of physical mechanisms determining these BHs of Schottky contacts [29].…”