1992
DOI: 10.1088/0268-1242/7/9/006
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The bistability effect in a bipolar transistor with resonant-tunnelling collector structure

Abstract: A bipolar transistor incorporating a resonant-tunnelling structure in its collector is investigated using both analytical a n d ensemble Monte Carlo particle models. A resonant-tunnelling transistor of t h i s type has two current states for a certain range of collector-base voltage. The double-valued characteristics and bistability effect are connected with electron space charge in t h e collector region

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Cited by 6 publications
(6 citation statements)
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“…The mobile electron space-charge accumulated in the collector n-layer (behind the RTS) when the RTS is open affects the electric field in the RTS. This creates a feedback [5,7] which can lead to the electric bistability of the LT and in turn to bistable light-voltage dependences. The electron heating in the QWAR adds complexity to the LT operation and, in particular, to its controllability.…”
Section: Rt Levels Qw Levelsmentioning
confidence: 99%
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“…The mobile electron space-charge accumulated in the collector n-layer (behind the RTS) when the RTS is open affects the electric field in the RTS. This creates a feedback [5,7] which can lead to the electric bistability of the LT and in turn to bistable light-voltage dependences. The electron heating in the QWAR adds complexity to the LT operation and, in particular, to its controllability.…”
Section: Rt Levels Qw Levelsmentioning
confidence: 99%
“…It is natural to assume that the electrons in the continuum states of the QWAR form a nondegenerate electron gas. In this case expressions (7) and ( 8), taking into account (6), can be rewritten as…”
Section: Device Structure and Modelmentioning
confidence: 99%
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