The characteristics of anisotype CdS/CdTe heterojunction

Design Band Energy diagram of SnO2/CdS-CdTe Thin Film Heterojunction Using I-V and C-V Measurements

“…In general, the I-V characteristics for the SnO 2 /CdS-CdTe heterojunction at forward bias voltage show that the forward current consists of two regions; the first region represents recombination currents while the second represents the tunneling currents [11]. The carrier transport mechanism for this case is of a tunneling-recombination type, in coherence with Alnajjar et al [9]. The reverse saturation current was calculated from the intercept of the straight line with the current axis at zero voltage bias.…”

“…Where A is area of junction. The intercept of the line that results from plotting between C -2 as a function of reverse bias represents the built-in potential and the carrier concentration can be calculated from the slope of this line from equation 3, the V bi value is 0.92.The higher value of V bi may be attributed to the midgap states that act as recombination centers that may arise either from states created as a result of junction fabrication or lattice mismatch between CdTe and CdS [9]. The capacitance measurement relies on the fact that the width (W) of the space-chargeregion (SCR) of a semiconductor device junction changes with applied voltage.…”

Fabrication of CdTe/Si heterojunction solar cell

“…In the present work, a simple chemical reduction method is followed to grow CdTe nanoparticles. In the last few decades, continuously increasing demand of alternative renewable energy sources has stimulated new scientific researches in the field of photovoltaic devices (Alnajjar et al 2009). The use of silicon (Si) as substrate material has many advantages, it is an obvious goal due to its mechanical strength, low price, and compatibility with standard Si-based device processing (Suela et al 2010).…”

Effect of annealing on conversion efficiency of nanostructured CdS/CuInSe2 heterojunction thin film solar cell prepared by chemical ion exchange route at room temperature

“…Among them, CdS/CuInSe 2 is considered as, promising nanomaterials for the development of solar cell owing to its tunable optoelectronic and physico-chemical properties, easy of synthesis, etc., these nanostructured heterojunction thin films can be grown by different routes such as physical and chemical, but achieving the desired stoichiometry, stability and the energy conversion efficiency are the topics of great concern, requiring extensive research. Nevertheless, the issues related to stoichiometry and stability can be resolved up to certain extent by preparing CdS/CuInSe 2 thin films using chemical ion exchange technique which has the merit that the film formed possesses homogenous interface between window (CdS) and absorber (CuInSe 2 ) layer [4,5], but improving the conversion efficiency in nanostructured CdS/CuInSe 2 thin films remains a challenge, extending the scope of the work [6,7]. As solar energy conversion is surface, interface and composition dependent phenomenon, the interface can be modified by ion exchange method, while surface and composition can be improved by providing post deposition treatments like annealing or swift heavy ion (SHI) irradiation [4,[8][9][10][11][12][13].…”