The DNA strand assisted conductive filament mechanism for improved resistive switching memory

Sun, Bai; Wei, Lujun; Li, Hongwei; Jia, Xiangjiang; Wu, Jianhong; Chen, Peng

doi:10.1039/c5tc02732b

Cited by 83 publications

(38 citation statements)

References 58 publications

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“…ECMMs utilize electrochemically active electrodes as TE and electrochemically inert electrodes as BE . The RS process in the switching layer involves three steps, i.e., oxidation of the metal electrode, migration, and reduction of metal cations.…”

Section: Ionotronic Memristorsmentioning

confidence: 99%

Ionotronic Neuromorphic Devices for Bionic Neural Network Applications

Zhu

2019

Physica Rapid Research Ltrs

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The von Neumann bottleneck constrains developments of conventional artificial intelligences (AIs) toward portable, energy efficient, and truly brain‐like systems. Biological synapses connecting neurons deliver neural action potentials by regulating neurotransmitters between presynaptic and postsynaptic membranes. In a similar way, ionotronic transistors and memristors transmit electronic signals through the migration of ionic species in dielectric and resistive switching electrolyte under external electrical field. Thus, utilizing ionotronic devices to emulate synapses and building bionic neural networks opens up a brand‐new path to realize hardware‐based AI. Moreover, it would allow the fabrication of an artificial perception learning system to mimic the human perception system with multi‐sensory learning abilities. This review presents ionotronic devices for neuromorphic engineering applications. The operation mechanisms and brain‐inspired synaptic responses and neural functions are discussed. At last, outlooks for ionotronic devices to construct bionic neural networks are provided.

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Section: Ionotronic Memristorsmentioning

confidence: 99%

Ionotronic Neuromorphic Devices for Bionic Neural Network Applications

Zhu

2019

Physica Rapid Research Ltrs

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“…This may be because conductive particles contribute to the formation of conductive laments and electron transport. [38][39][40] We also studied the resistance of the HRS and LRS of the doped device, as shown in Fig. 6b.…”

Section: Resultsmentioning

confidence: 99%

A sustainable resistive switching memory device based on organic keratin extracted from hair

et al. 2019

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“…To investigate the electric switching characteristics of the devices, the measured I–V data were further analyzed in detail using various conduction models, including Ohmic conduction, Schottky emission, Poole–Frenkel emission, tunnel or emission, hopping conduction, space‐charge‐limited current (SCLC) conduction, and thermionic emission . However, it is found that any individual conduction mechanism mentioned above cannot fit well the characteristics for both the ON state and the OFF state at the same time, which suggests the involvement of probably different charge transport processes in the two conduction states …”

Section: Resultsmentioning

confidence: 99%

Organo‐Solubility Carbazole‐Containing Polyimides with Tunable Memory Characteristics Based on Different Dianhydride Moieties

Yang

Jin

Shen

2018

Macro Chemistry & Physics

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A novel asymmetric carbazole‐based diamine (9‐((4′‐(9H‐carbazolyl)‐[1,1′‐biphenyl])methyl)‐3,6‐diaminocarbazole (BCDA‐CBZ)) is synthesized and characterized. Two aromatic conjugated polyimides (PI‐a and PI‐b) are prepared via a two‐step procedure using BCDA‐CBZ reacting with 2,2′,3,3′‐biphenyl‐tetracarboxylic dianhydride (i‐BPDA) and 2,2′‐bis(4′‐phenyl)‐4,4′,5,5′‐biphenyltetracarboxylic dianhydride (DPBPDA), respectively. The resulting PIs possess excellent organo‐solubility, are thermally stable, and have film‐formation ability. The Al/PI‐a/ITO exhibits a dynamic random access memory behavior, whereas the Al/PI‐b/ITO presents a rewritable type memory capability. The fabricated PI‐a device shows low turn‐on threshold voltages at −1.47 and +2.85 V, and the switching voltages of PI‐b device are −2.07 (turn‐on) and +2.85 V (turn‐off). The electrical conduction behaviors are analyzed using theoretical models based on the experimental data. The molecular simulation by density functional theory calculations suggests that field‐induced charge‐transfer and the conformation change mechanism could be used to explain the memory characteristics.

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The DNA strand assisted conductive filament mechanism for improved resistive switching memory

Abstract: The DNA strand assisted conductive filament mechanism is suggested to explain the resistive switching behaviors of the Au/CuO-DNA-Al/Au/Si device.

Cited by 83 publications

References 58 publications

Ionotronic Neuromorphic Devices for Bionic Neural Network Applications

Ionotronic Neuromorphic Devices for Bionic Neural Network Applications

A sustainable resistive switching memory device based on organic keratin extracted from hair

Organo‐Solubility Carbazole‐Containing Polyimides with Tunable Memory Characteristics Based on Different Dianhydride Moieties

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