The effect of gate electrodes using tungsten silicides and/or poly-silicon on the dielectric characteristics of very thin oxides

Cheng, Huang–Chung; Chao, Christopher Yu Hang; Su, Wanhan; Chang, S. W.; Lee, M. K.; Wu, Chung-Yu

doi:10.1016/0038-1101(90)90202-p

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1991

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Cited by 6 publications

(1 citation statement)

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“…That, in turn, causes undesirable degradation in bandwidth and electrical characteristics of the IC devices. To resolve such a problem, there have been much efforts to replace the conventional polysilicon with more conductive metal silicide such as TiSi 2 or WSi x [1][2][3][4]. These new materials have been tried as gate, word, and bit-lines in 0167-9317/$ -see front matter Ó 2004 Elsevier B.V. All rights reserved.…”

Section: Introductionmentioning

confidence: 98%

Influence of the oxidation in the metal silicide/Si3N4 interfaces on the etching profile

Kim

Ahn

et al. 2005

Microelectronic Engineering

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Section: Introductionmentioning

confidence: 98%

Influence of the oxidation in the metal silicide/Si3N4 interfaces on the etching profile

Kim

Ahn

et al. 2005

Microelectronic Engineering

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Modelling of radiation-induced charge trapping at the Si*SiO2 interface of MOS structures

Tkachev¹,

Lysenko²,

Turchanikov³

1993

Phys. Stat. Sol. (a)

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The effect of high‐temperature treatments in inert atmosphere, performed after deposition of phosphorus‐doped polycrystalline silicon, on the accumulation of radiation‐induced charge in Si*SiO2Si structures is investigated. It is shown that these treatments lead to an increase of hole trap concentration on both SiO2 interfaces, and the hole trap creation at the Si*SiO2 interface is related with phosphorus diffusion from Si* into SiO2. A model of charge accumulation at the Si*SiO2 interface is proposed, which satisfactorily explains experimental data.

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Effects of P+-implanted poly-Si electrodes on the gate dielectric characteristics of thin oxides

Cheng¹,

Chen²

1991

Nuclear Instruments and Methods in Physics Research Section B:

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The effect of gate electrodes using tungsten silicides and/or poly-silicon on the dielectric characteristics of very thin oxides

Cited by 6 publications

References 37 publications

Influence of the oxidation in the metal silicide/Si3N4 interfaces on the etching profile

Influence of the oxidation in the metal silicide/Si3N4 interfaces on the etching profile

Modelling of radiation-induced charge trapping at the Si*SiO2 interface of MOS structures

Effects of P+-implanted poly-Si electrodes on the gate dielectric characteristics of thin oxides

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