The effect of the collector contact design on the performance and yield of 800V Lateral IGBTs for power ICs

Camuso, Gianluca; Udrea, F.; Udugampola, N.; Pathirana, V.; Trajković, T.

doi:10.1109/ispsd.2015.7123419

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The effect of the collector contact design on the performance and yield of 800V Lateral IGBTs for power ICs

Cited by 4 publications

References 3 publications

The high temperature DC characteristics of a high voltage lateral insulated-gate bipolar transistors with NPN anode in junction isolation technology

The high temperature DC characteristics of a high voltage lateral insulated-gate bipolar transistors with NPN anode in junction isolation technology

Flip-chip assembly and 3D stacking of 1000V lateral IGBT (LIGBT) dies

Influence of Latch-Up Immunity Structure on ESD Robustness of SOI-LIGBT Used As Output Device

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