1966
DOI: 10.1149/1.2424101
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The Epitaxial Growth of Silicon Carbide

Abstract: A method for growing normalSiC epitaxially on the (0001) plane of 6HnormalSiC is described. The normalSiC is grown from the vapor phase by the reaction of hydrogen with silicon and carbon tetrachlorides. Cubic normalSiC grows at temperatures between 1600° and 1775°C. In order to grow hexagonal normalSiC , the substrate surface must be polished mechanically and the temperature must be greater than 1725°C.

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Cited by 70 publications
(27 citation statements)
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“…The use of off-oriented substrates promotes homoepitaxial growth in the sense that only the polytype of the substrate is replicated in the epitaxial layer grown at a low deposition temperature (1500-1600 1C) with a mirror-like surface of high crystalline quality [1]. On-axis substrates were originally used [2][3][4], but much higher temperatures (more than 1800 1C) were needed and the grown material was of lower crystalline quality. Bipolar devices are affected by the presence of basal plane dislocations (BPD) in the epitaxial layer, which cause a drift of the forward voltage during operation [5,6], however, their propagation in the epitaxial layer can be avoided if the epitaxial growth is done on on-axis substrates [7,8].…”
Section: Introductionmentioning
confidence: 99%
“…The use of off-oriented substrates promotes homoepitaxial growth in the sense that only the polytype of the substrate is replicated in the epitaxial layer grown at a low deposition temperature (1500-1600 1C) with a mirror-like surface of high crystalline quality [1]. On-axis substrates were originally used [2][3][4], but much higher temperatures (more than 1800 1C) were needed and the grown material was of lower crystalline quality. Bipolar devices are affected by the presence of basal plane dislocations (BPD) in the epitaxial layer, which cause a drift of the forward voltage during operation [5,6], however, their propagation in the epitaxial layer can be avoided if the epitaxial growth is done on on-axis substrates [7,8].…”
Section: Introductionmentioning
confidence: 99%
“…However, the crystal structure on the {0 0 0 1} face of aSiC such as 6H or 4H-SiC is identical to that on (1 1 1) face of 3C-SiC. For this reason, 3C-SiC can easily be made to include aSiC epitaxial layers grown on (0 0 0 1) substrates by chemical vapor deposition (CVD) [1,2]. Therefore, control of the polytype is a key factor in the homoepitaxy of SiC {0 0 0 1} substrate.…”
Section: Introductionmentioning
confidence: 99%
“…Previous studies on epitaxial growth on low-off-angle substrates were carried out on Si-face substrates. [2,3,[24][25][26] In this case, it is difficult to suppress the bunched step structure on a grown epitaxial layer surface; this structure is generally formed to reduce the surface energy. With regard to the surface energy of the 4H-SiC {0001} face, the surface energy of the 4H-SiC C-face is less than that of the Si-face.…”
Section: Advantages Of C-face Epitaxial Growth Formentioning
confidence: 99%
“…For this reason, 3C-SiC can easily be made to include a-SiC epitaxial layers grown on (0001) substrates by CVD. [2,3] Shibahara et al and Kong et al developed "step-controlled epitaxy" in 1987, [4,5] in which the growth is performed on off-axis substrates tilted several degrees toward the [11][12][13][14][15][16][17][18][19][20] direction. An off-axis substrate shows the stacking sequences along the c-axis at the substrate surface.…”
Section: Introductionmentioning
confidence: 99%
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