“…The newly explored two‐dimension (2D) materials exhibit distinctive applications in advanced state‐of‐the‐art devices such as sensors, [ 1 , 2 , 3 , 4 , 5 ] optical imaging, [ 6 , 7 , 8 ] FET, [ 9 , 10 , 11 , 12 ] and photodetectors (PD) [ 13 , 14 , 15 , 16 , 17 , 18 , 19 ] due to their excellent electrical and optical properties of high carrier mobility, [ 20 , 21 ] high absorption coefficient, [ 22 ] suitable band gap, [ 23 ] and strong light–matter interactions. [ 24 ] The 2D transition‐metal dichalcogenides especially MoS 2 with n‐type conductive feature due to nonmetallic defects, typically has a layer dependent band gap ranging from 1.2 to 1.9 eV, and could transfer to direct band gap when the number of layers reduced to monolayer, [ 25 , 26 ] indicating an ideal material choice for UV–visible and near infrared (NIR) photodetection.…”