The far infrared optical properties of InP at 6 and 300 K

Jamshidi, H.; Parker, T.J.

doi:10.1007/bf01009327

Cited by 5 publications

(1 citation statement)

References 19 publications

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“…The fitted value of the Lorentz oscillator frequency is at the maximum of the imaginary part of the permittivity, called the transversal phonon [27]. The Lattice vibrations match those reported by other authors (InP [28], GaAs [11], InSb [12]). …”

Section: Spectroscopic Characterizationsupporting

confidence: 70%

Plasmonic behavior of III-V semiconductors in far-infrared and terahertz range

Chochol

Postava

Čada

et al. 2017

J. Eur. Opt. Soc.-Rapid Publ.

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Background:In this article, III-V semiconductors are proposed as materials for far-infrared and terahertz plasmonic applications. We suggest criteria to estimate appropriate spectral range for each material including tuning by fine doping and magnetic field. Methods: Several single-crystal wafer samples (n,p-doped GaAs, n-doped InP, and n,p-doped and undoped InSb) are characterized using reflectivity measurement and their optical properties are described using the Drude-Lorentz model, including magneto-optical anisotropy. Results: The optical parameters of III-V semiconductors are presented. Moreover, strong magnetic modulation of permittivity was demonstrated on the undoped InSb crystal wafer in the terahertz spectral range. Description of this effect is presented and the obtained parameters are compared with a Hall effect measurement. Conclusion: Analyzing the phonon/free carrier contribution to the permittivity of the samples shows their possible use as plasmonic materials; the surface plasmon properties of semiconductors in the THz range resemble those of noble metals in the visible and near infrared range and their properties are tunable by either doping or magnetic field.

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