The growth of silicon carbide needles by the vapor-liquid-solid method

Berman, I.; Ryan, C.

doi:10.1016/0022-0248(71)90248-x

Cited by 39 publications

(11 citation statements)

References 9 publications

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“…The growth of 2H-SiC nanowhiskers appears not to follow the conventional metal-catalyst VLS method [24], because there are no catalysts or particles at the tip of the nanowhiskers. We propose that the SiC nanowhiskers were formed via the following process.…”

Section: Resultsmentioning

confidence: 99%

Direct synthesis of 2H–SiC nanowhiskers

Yao

Lee

2003

Chemical Physics Letters

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Section: Resultsmentioning

confidence: 99%

Direct synthesis of 2H–SiC nanowhiskers

Yao

Lee

2003

Chemical Physics Letters

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“…The growth of the typical nanowires should not be synthesized from conventional metal catalized VLS growth mechanism, 27) because there were no cap catalyst at the tip of nanowire, whereas the un-typical nanowires with a cap at the tip of nanowire should be grown by the VLS mechanism. A little amount of Fe impurity in the Si nanopowders (less than 15 ppm), the starting material, can act as a self-metal catalyst to create liquid droplets.…”

Section: Resultsmentioning

confidence: 99%

Synthesis of .BETA.-SiC/SiO2 core-shell nanowires by simple thermal evaporation

Khongwong

Imai

Yoshida

et al. 2009

J. Ceram. Soc. Japan

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Beta-SiC/SiO2 core-shell nanowires were obtained in a mullite boat after the reaction between silicon nanopowder and CH4 gas at 1623 K (1350°C), without adding metal catalysts from outside. The as-grown nanowires were characterized by X-ray diffractometry, scanning electron microscopy, transmission electron microscopy, scanning TEM, and infrared-ray spectroscopy.The results showed that the typical nanowires consisted of single crystalline β -phase SiC core of 50-70 nm in diameter and a uniform wrapping layer of low crystallinity SiO2 of ~15 nm in thickness, and their lengths were up to several tens of micrometers. The nanowires axes lay along the [111] direction of β -SiC. Oxygen from the experimental setup or the raw powder should be a key factor to synthesize the core/shell nanowires.

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“…Only whiskers of 2H-SiC have been obtained by CVD with the pyrolytic decomposition of Si chloride precursors, such as CH 3 SiCl 3 or SiCl 4 with C 6 H 5 CH 3 or CCl 4 in a H 2 atmosphere at 1573-1773 K [5][6][7][8][9]. Films of 3C-SiC are mostly obtained by CVD at a wide range of deposition temperatures (1373-2673 K), except for epitaxial growth of 4H-and 6H-SiC films on single-crystal substrates [1,10,11].…”

Section: Introductionmentioning

confidence: 99%

2H-SiC films grown by laser chemical vapor deposition

Ito

Kanno

Goto

2015

Journal of the European Ceramic Society

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a b s t r a c tWe demonstrated the synthesis of 2H-SiC films on graphite and (0001) sapphire substrates by laser chemical vapor deposition. A tris(dimethylamino) silane was used as a novel precursor for the synthesis of SiC films in a CH 4 atmosphere. The 2H-SiC films were obtained at a deposition temperature of 920 K on the sapphire substrate. The films comprised a-axis-oriented columnar grains and their in-plane orientation relationship was [1000] 2H-SiC // [0001] sapphire and [0001] 2H-SiC // [1000] sapphire. The films were deposited at the rate of 182 m h −1 .

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The growth of silicon carbide needles by the vapor-liquid-solid method

Cited by 39 publications

References 9 publications

Direct synthesis of 2H–SiC nanowhiskers

Direct synthesis of 2H–SiC nanowhiskers

Synthesis of .BETA.-SiC/SiO2 core-shell nanowires by simple thermal evaporation

2H-SiC films grown by laser chemical vapor deposition

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