IEEE/ACM International Conference on Computer Aided Design, 2004. ICCAD-2004.
DOI: 10.1109/iccad.2004.1382598
|View full text |Cite
|
Sign up to set email alerts
|

The impact of device parameter variations on the frequency and performance of VLSI chips

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
4
1

Citation Types

0
26
0

Publication Types

Select...
4
3
1

Relationship

0
8

Authors

Journals

citations
Cited by 46 publications
(26 citation statements)
references
References 5 publications
0
26
0
Order By: Relevance
“…Thus, the gate-to-gate correlation is assumed to come from the joint impact of intra-and inter-chip variability only. We believe this is reasonable because (a) the data on spatial correlation is typically not available, (b) spatially correlated components are not numerically significant [11] and (c) it is possible to use an additive model to bound the impact of any remaining spatially-correlated intra-chip variability.…”
Section: Statistical Modeling and Optimizationmentioning
confidence: 99%
“…Thus, the gate-to-gate correlation is assumed to come from the joint impact of intra-and inter-chip variability only. We believe this is reasonable because (a) the data on spatial correlation is typically not available, (b) spatially correlated components are not numerically significant [11] and (c) it is possible to use an additive model to bound the impact of any remaining spatially-correlated intra-chip variability.…”
Section: Statistical Modeling and Optimizationmentioning
confidence: 99%
“…The magnitude of intradie channel length variations has been estimated to increase from 35% of total variations in 130 nm to 60% in 70 nm CMOS process and variation in wire width, height, and thickness is also expected to increase from 25% to 35% [7]. In CMOS 65 nm process, the parameters that affect timing the most are device length, threshold voltage, device width, mobility, and oxide thickness [8]. For process variation sensitive circuits such as SRAM arrays and dynamic logic circuits, these process variations may result in functional failure and yield loss [7].…”
Section: Introductionmentioning
confidence: 99%
“…In addition to well known issues of concurrent programming, reliability and power management in CMPs [27], [10], there is a newly emerging and significant obstacle as we move toward future CMPs with a large number of cores: process variation [15], [26], [29], [12], [17]. In deep sub-micron design technology, it is becoming increasingly difficult to control critical transistor parameters such as gate-oxide thickness, channel length, and dopant concentrations.…”
Section: Introductionmentioning
confidence: 99%
“…Our work is different from these prior studies because most of them do not focus on performance. Specifically, [15], [26], [29], [12], [17] discuss the impact of process variation on chips. In comparison, [11] and [9] focus on profit and yield, respectively.…”
Section: Introductionmentioning
confidence: 99%
See 1 more Smart Citation