The impact of dopant contents on structures, morphologies and optical properties of Eu doped Ga2O3 films on GaAs substrate

Low driven voltage red LEDs using Eu-doped Ga2O3 films on GaAs

“…26) It is well known that the Raman frequencies for β-Ga 2 O 3 are classified into three groups of vibrations related to vibrations and translations of tetrahedral-octahedral chains, vibrations of deformed Ga 2 O 6 octahedrals and stretching/bending of GaO 4 tetrahedrals. 25) The Raman frequencies for Eu:Ga 2 O 3 films and β-Ga 2 O 3 bulk have good agreement, verifying that the films obtained in this work are of monoclinic structure. 27) The inset of Fig.…”

“…[22][23][24] Recently, we have also demonstrated that high-quality Ga 2 O 3 films could be epitaxially grown on GaAs and have observed clearly the intense red emissions around 611 nm. 25) Therefore, it is believed that red emission could be enabled from LEDs based on Eu:Ga 2 O 3 /GaAs heterojunctions. In this work, we have fabricated Eu:Ga 2 O 3 /GaAs LEDs.…”

“…More experimental details have been reported in our previous article. 25) Bulk Ga 2 O 3 ceramic with 1.3 at% Eu content was used as the target. The oxygen pressure was set at 1 × 10 −1 Pa while the deposition temperature was 500 °C.…”

Temperature dependence of luminescence characteristics from Eu doped Ga2O3 thin films excited by synchrotron radiation source

“…Figure 3(a) displays the temperature-dependent PL spectra of the Ga 2 O 3 :Eu thin film recorded at different temperatures between 21 and 300 K. For the PL spectrum recorded at 21 K, multiple sharp emission lines associated with the intra-4f shell transitions of Eu 3+ dopants are distinctly shown, with the main contribution resulting from the hypersensitive electric dipole transition of 5 D 0 → 7 F 2 at 610 nm. 20) Four minor emission bands appearing at about 580, 595, 653, and 712 nm are caused by the electronic transitions of 5 D 0 → 7 F 0 , 5 D 0 → 7 F 1 , 5 D 0 → 7 F 3 , and 5 D 0 → 7 F 4 , respectively. 20) Note that the emission wavelength of Eu 3+ -related PL remains almost unaltered within the investigated temperature range, which is a consequence of the shielding effect of 4f shell by the complete outer 5s and 5p orbitals.…”

“…20) Four minor emission bands appearing at about 580, 595, 653, and 712 nm are caused by the electronic transitions of 5 D 0 → 7 F 0 , 5 D 0 → 7 F 1 , 5 D 0 → 7 F 3 , and 5 D 0 → 7 F 4 , respectively. 20) Note that the emission wavelength of Eu 3+ -related PL remains almost unaltered within the investigated temperature range, which is a consequence of the shielding effect of 4f shell by the complete outer 5s and 5p orbitals.…”