The impact of oxidation on the optical properties of Si–SiC materials

Abstract

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Review of the designs in low inductance SiC half‐bridge packaging

“…As can be observed from Figure 1, the performance of SiC materials is excellent compared with Si in terms of bandgap, breakdown field, thermal conductivity, and saturated drift speed [16]. These advantages allow SiC materials are utilized to make high temperature or high voltage [17], or high frequency power devices [18].…”

Structures, Electronic Properties and Carrier Transport Mechanisms of Si Nano-Crystalline Embedded in the Amorphous SiC Films with Various Si/C Ratios

“…In the current studies, more and more attention has been focused on the Si nanocrystals (Si NCs) embedded in amorphous SiC (Si NCs:a-SiC) films due to their applications in nano-electronic and optoelectronic devices, including Si-based light-emitting diode, nonvolatile memories, biosensors, and especially the Si-based solar cells [1][2][3][4][5]. It is generally accepted that SiC is beneficial to improve the performance of devices because of its lower band-gap compared with that of SiO 2 and SiNx, which thereby contributes to the carrier transport properties [6].…”