The Impact of Parasitic Inductance on the Performance of Silicon–Carbide Schottky Barrier Diodes

Alatise, Olayiwola; Parker-Allotey, N.-A.; Hamilton, Dean P.; Mawby, P.A.

doi:10.1109/tpel.2012.2183390

Cited by 56 publications

(26 citation statements)

References 7 publications

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“…The measurements were performed in clamped inductive switching test rig [32]- [34], the schematic of which are shown in Figure 2 and the picture of the HV test rig is shown in Figure 3. For measurements that require a pre-defined ambient temperature, a Tenney environmental series 942 is used to monitor and maintain the ambient temperature within the specified levels.…”

Section: Experimental Measurements On Body Diodesmentioning

confidence: 99%

An Analysis of the Switching Performance and Robustness of Power MOSFETs Body Diodes: A Technology Evaluation

Jahdi

Alatise

Bonyadi

et al. 2015

IEEE Trans. Power Electron.

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Section: Experimental Measurements On Body Diodesmentioning

confidence: 99%

An Analysis of the Switching Performance and Robustness of Power MOSFETs Body Diodes: A Technology Evaluation

Jahdi

Alatise

Bonyadi

et al. 2015

IEEE Trans. Power Electron.

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“…the R G = 15 Ω measurements shows less dependence of V AK on temperature. Previous publications have shown a temperature invariance of the SiC Schottky diode turn-OFF characteristics [14]; however, this was demonstrated at low gate resistance (R G = 2.5 Ω) as is the case in Figure 17. At slower switching rates (larger gate resistances); the dependence of dI DS /dt on temperature affects the diode temperature characteristics as shown in Figure 16 In other words, the rate at which the transistor switches will determine the response of the diode to the discharge of the free-wheeling current.…”

Section: Diode Switching Analysismentioning

confidence: 70%

“…However, advances in packaging technologies are not catching up with devices. Parasitic inductances in power modules induce electromagnetic oscillations in output characteristics which can be detrimental through the additional losses and reduced reliability [14]- [18]. These parasitic inductances depend strongly on the architecture of the power module and its layout.…”

Section: Introductionmentioning

confidence: 99%

The Impact of Temperature and Switching Rate on the Dynamic Characteristics of Silicon Carbide Schottky Barrier Diodes and MOSFETs

Jahdi

Alatise

Alexakis

et al. 2015

IEEE Trans. Ind. Electron.

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. (2015) The impact of temperature and switching rate on the dynamic characteristics of silicon carbide schottky barrier diodes and MOSFETs. IEEE Transactions on Industrial Electronics, Volume 62 (Number 1). pp. 163-171. Permanent WRAP URL:http://wrap.warwick.ac.uk/69590 Copyright and reuse:The Warwick Research Archive Portal (WRAP) makes this work by researchers of the University of Warwick available open access under the following conditions. Copyright © and all moral rights to the version of the paper presented here belong to the individual author(s) and/or other copyright owners. To the extent reasonable and practicable the material made available in WRAP has been checked for eligibility before being made available.Copies of full items can be used for personal research or study, educational, or not-for profit purposes without prior permission or charge. Provided that the authors, title and full bibliographic details are credited, a hyperlink and/or URL is given for the original metadata page and the content is not changed in any way.Publisher's statement: "© 2015 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting /republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works." A note on versions:The version presented here may differ from the published version or, version of record, if you wish to cite this item you are advised to consult the publisher's version. Please see the 'permanent WRAP URL' above for details on accessing the published version and note that access may require a subscription. Abstract-SiC Schottky Barrier Diodes (SBDs) are prone to electromagnetic oscillations in the output characteristics. The oscillation frequency, peak voltage overshoot and damping are shown to depend on the ambient temperature and the MOSFET switching rate (dIDS/dt). In this paper, it is shown experimentally and theoretically that dIDS/dt increases with temperature for a given gate resistance during MOSFET turn-ON and reduces with increasing temperature during turn-OFF. As a result of this, the oscillation frequency and peak voltage overshoot of the SiC-SBD increases with temperature during diode turn-OFF. This temperature dependency of the diode ringing reduces at higher dIDS/dt and increases at lower dIDS/dt. It is also shown that the rate of change of dIDS/dt with temperature (d 2 IDS/dtdT) is strongly dependent on RG and using fundamental device physics equations, this behavior is predictable. The dependence of the switching energy on dIDS/dt and temperature in 1.2 kV SiC-SBDs is measured over a wide temperature range (-75°C to 200°C).The diode switching energy analysis shows that the losses at low dIDS/dt are dominated by the transient duration and losses at high dIDS/dt are dominated by electromagnetic oscillations. The model developed and results obta...

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“…However, although diode reverse recovery process is eliminated by using SiC SBD, the effects caused by junction capacitance are still present. Since the drift layer of a SiC SBD is thinner than Si diode, with the same chip area, the junction capacitance of SiC SBD is larger than Si diode [4]. Due to the extremely fast recovery process of SiC SBD and the resonance between the junction capacitance of SiC Nan Zhu, Xingyao Zhang, Min Chen, and Dehong Xu are with College of Electrical Engineering, Zhejiang University, Hangzhou, China, Seiki Igarashi, Tatsuhiko Fujihira are with Fuji Electric Co., Ltd., Japan (e-mail: xdh@zju.edu.cn).…”

Section: Transconductance Of the Igbt E Onmentioning

confidence: 99%

Turn-On Oscillation Damping for Hybrid IGBT Modules

Zhu¹,

Zhang²,

Chen³

et al. 2016

CPSS TPEA

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Abstract-In a hybrid IGBT module with SiC diodes as free-wheeling diodes, high frequency oscillation occurs during turn-on due to the fast switching transient of SiC diode and the resonance between circuit parasitic inductances and the junction capacitance of SiC diode. Such oscillation causes EMI noise which may affect the performance of the system. Methods to mitigate the turn-on oscillation are studied. Firstly, the effect of gate drive parameters on turn-on oscillation is investigated with respect to different gate voltages and gate charging currents. Then a novel turn-on oscillation suppression method is proposed with combination of damping circuit and active gate driver. The proposed oscillation suppression method can achieve the lowest EMI noise while remaining the advantage of lower switching loss brought by SiC diodes. Detailed theoretical analysis of the turn-on oscillation is conducted, and experimental results are given to verify the effectiveness of the proposed oscillation suppression method. Index terms-Hybrid

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The Impact of Parasitic Inductance on the Performance of Silicon–Carbide Schottky Barrier Diodes

Cited by 56 publications

References 7 publications

An Analysis of the Switching Performance and Robustness of Power MOSFETs Body Diodes: A Technology Evaluation

An Analysis of the Switching Performance and Robustness of Power MOSFETs Body Diodes: A Technology Evaluation

The Impact of Temperature and Switching Rate on the Dynamic Characteristics of Silicon Carbide Schottky Barrier Diodes and MOSFETs

Turn-On Oscillation Damping for Hybrid IGBT Modules

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