The impact of ultrathin Al2O3films on the electrical response of p-Ge/Al2O3/HfO2/Au MOS structures

The influence of deposition temperature on the structural, chemical, and electrical properties of atomic layer deposition (ALD)-Al2O3 thin films is investigated. ALD-Al2O3 films were deposited on p-type Ge substrates at 80, 150, 200, 250, and 300 °C. The atomic force microscopy analysis reveals smooth and cohesive films with extremely low roughness (0.2–0.6) nm at 150, 200, 250, and 300 °C. On the contrary, Al2O3 films deposited at the lowest available deposition temperature (80 °C) exhibit holes and aggregates implying a nonhomogeneous deposition. The x-ray photoelectron spectroscopy (XPS) analysis indicates the presence of stoichiometric Al2O3 films at all deposition temperatures. The calculated thickness from the analysis of XPS spectra seems to be in good agreement with the ALD nominal thickness for the films deposited at all deposition temperatures except the one of 80 °C. Transmission electron microscopy (TEM) analysis reveals a flat interface between Al2O3 and p-Ge in an atomic level. In addition, TEM and XPS analyses indicate the absence of any oxidized interlayer between p-Ge and Al2O3 films. Furthermore, C-V, G-V, C-f, G-f, and J-V measurements were performed in order to study the electrical properties and evaluate the density of interfacial traps (Dit) of the structures prior and following forming gas annealing procedure. Forming gas annealing clearly improves the electrical response of all tested structures, as expected, by reducing significantly the “streching out” effect and the frequency dispersion at the depletion regime. Leakage currents and Dit in the order of 10−4 A/cm2 (for applied voltage 1 V) and 1011 eV−1 cm−2, respectively, were measured-calculated for all tested structures.

show abstract

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

customersupport@researchsolutions.com

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

This site is protected by reCAPTCHA and the Google Privacy Policy and Terms of Service apply.

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

The impact of ultrathin Al₂O₃films on the electrical response of p-Ge/Al₂O₃/HfO₂/Au MOS structures

Cited by 5 publications

References 40 publications

Conduction mechanisms responsible for leakage currents in RF sputtered HfO2 high-κ gate-oxide thin film MOS capacitors

Conduction mechanisms responsible for leakage currents in RF sputtered HfO2 high-κ gate-oxide thin film MOS capacitors

Influence of Mg ion concentration in ZrO2 gate dielectric layered silicon based MOS capacitors for memory applications: Thorough understanding of conduction processes

Influence of the atomic layer deposition temperature on the structural and electrical properties of Al/Al2O3/p-Ge MOS structures

Contact Info

Product

Resources

About