The Influence of Germanium on the Formation and Annealing of Radiation Damage in Silicon

Italyantsev, A. G.; Khirunenko, Lyudmila I.; Mordkovich, V.N.; Rubinova, E.E.; Temper, E.M.; Trunov, V. A.; Shakhovtsov, V. I.; Shpinar, L.I.; Yashnik, V. I.

doi:10.4028/www.scientific.net/msf.38-41.1163

Cited by 6 publications

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“…With that end in view SiGe was also investigated. It is supposed that the existence of elastic stresses in the matrix lattice of SiGe due to the larger covalent radius of Ge considerably enhances the recombination rate of interstitials [9,10]. As a matter of fact, the experiments on SiGe with different content of Ge revealed that the content of Ge dramatically changes the intensity of the defects nucleation.…”

Section: Resultsmentioning

confidence: 98%

The Origin and Properties of New Extended Defects Revealed by Etching in Plastically Deformed Si and SiGe

Eremenko

Абросимов

Fedorov

1999

phys. stat. sol. (a)

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Section: Resultsmentioning

confidence: 98%

The Origin and Properties of New Extended Defects Revealed by Etching in Plastically Deformed Si and SiGe

Eremenko

Абросимов

Fedorov

1999

phys. stat. sol. (a)

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“…Nitrogen on the contrary is reported to suppress strongly {ll3}-defect nucleation even for a nitrogen concentration as low as 1015 cm -3 [14]. A similar suppression of defect formation is observed in germanium-doped silicon or in silicon/germanium alloys [8,15].In the present study an attempt is made to extend the first order model of [10] to explain also the observations obtained after irradiation in a high voltage transmission electron microscope of plan view and cross-section specimens of highly doped silicon. It is shown that the published data on {113}-defect generation in uniformly…”

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confidence: 55%

On the influence of extrinsic point defects on irradiation-induced point-defect distributions in silicon

Vanhellemont

Romano‐Rodríguez²

1994

Appl. Phys. A

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Abstract.A semi-quantitave model describing the influence of interfaces and stress fields on {ll3}-defect generation in silicon during 1-MeV electron irradiation, is further developed to take into account also the role of extrinsic point defects. It is shown that the observed distribution of { 113}-defects in high-flux electron-irradiated silicon and its dependence on irradiation temperature and dopant concentration can be understood by taking into account not only the influence of the surfaces and interfaces as sinks for intrinsic point defects but also the thermal stability of the bulk sinks for intrinsic point defects. In heavily doped silicon the bulk sinks are related with pairing reactions of the dopant atoms with the generated intrinsic point defects or related with enhanced recombination of vacancies and self-interstitials at extrinsic point defects. The obtained theoretical results are correlated with published experimental data on boronand phosphorus-doped silicon and are illustrated with observations obtained by irradiating cross-section transmission electron microscopy samples of wafers with highly doped surface layers. PACS: 61.80.Fe, 61.70.Bv, 61.70.Yq Irradiation of electronic devices with high energy particles leads to a degradation of the device characteristics which is partly due to the creation of lattice damage in the active areas of the devices. A convenient way of studying the basic mechanisms of the formation of radiation-induced displacement damage is irradiation with MeV electrons which is known to create individual intrinsic point defects rather than extensive collision cascades. Low flux electron irradiation leads to the formation of point defect complexes such as divacancies and dopant/intrinsic point defect pairs. High fluxes of MeV * Permanent address: LCMM, Departament de Fisica Aplicada i Electrbnica, Universitat de Barcelona, Diagonal 647, E-08028 Barcelona, Spain electrons create a supersaturation of self-interstitials which cluster in so-called {ll3}-defects which can be observed in situ during irradiation in a High-Voltage transmission Electron Microscope (HVEM). The distribution of {113}-defects in the irradiated sample can be used to monitor local variations of the intrinsic pointdefect concentration.Already in 1981, Brown and Fathy [1] observed a strong dependence of { 113}-defect generation on the type and the concentration of dopant atoms. Aseev and coworkers [2][3][4][5] have studied this phenomenon in more detail using silicon samples doped with different concentrations of boron or phosphorus atoms. Recently, experimental results were also obtained by the present authors by irradiating cross-section samples of wafers with a dopant concentration depth profile [6][7][8][9]. The impact of interfaces and localised mechanical stress fields on the {ll3}-defect distribution was discussed in a previous paper in which a first order model was presented to explain the generation of {ll3}-defects near TEM specimen surfaces and interfaces [10].Other extrinsic point defects which a...

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Influence of germanium content on the degradation of strained Si1−xGex epitaxial diodes by electron irradiation

Ohyama

Vanhellemont

Sunaga³

et al. 1994

Phys. Stat. Sol. (a)

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The degradation of strained n+‐Si/p+‐Si1−xGex epitaxial diodes, which are irradiated at room temperature with 1 MeV electrons in a high‐voltage transmission electron microscope, is investigated. Special attention is given to the influence of the germanium content on the degradation of electrical characteristics and on the introduction of lattice defects into the epitaxial layer. The diode degradation and the deep level density for the x = 0.12 diodes are larger than for the x = 0.16 diodes. This can be explained by the fact that germanium atoms act as recombination centres for vacancies and interstitials thus decreasing the generation rate of stable radiation defects and by the fact that the energy absorbed in the epitaxial layer during irradiation decreases with increasing germanium content due to the smaller stopping power of germanium atoms.

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The Influence of Germanium on the Formation and Annealing of Radiation Damage in Silicon

Cited by 6 publications

References 0 publications

The Origin and Properties of New Extended Defects Revealed by Etching in Plastically Deformed Si and SiGe

The Origin and Properties of New Extended Defects Revealed by Etching in Plastically Deformed Si and SiGe

On the influence of extrinsic point defects on irradiation-induced point-defect distributions in silicon

Influence of germanium content on the degradation of strained Si1−xGex epitaxial diodes by electron irradiation

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