The limitation of the Split-Gate MOSFET(SG-MOSFET) at 3.3kV

Cha, Kyuhyun; Yoon, Jongwoon; Cheon, Jinhee; Kim, Kwangsoo

doi:10.1109/iceic51217.2021.9369734

Cited by 5 publications

(3 citation statements)

References 8 publications

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“…In particular, SG-DMOSFETs have a serious problem of a high E MOX at the gate-oxide corner, which leads to issues with the reliability of the gate oxide. Previously, we showed that, for high-voltage (>3.3 kV) SG-DMOSFETs, the BFOM reduction is intensified as the L SG decreases compared to the HF-FOM improvement [11]. The decrease in BFOM and gate-oxide reliability issues limits the ability of SG-DMOSFETs to improve HF-FOM at high voltages.…”

Section: Introductionmentioning

confidence: 98%

3.3-kV 4H-SiC Split-Gate DMOSFET with Floating p+ Polysilicon for High-Frequency Applications

2021

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A split-gate metal–oxide–semiconductor field-effect transistor (SG-DMOSFET) is a well-known structure used for reducing the gate–drain capacitance (CGD) to improve switching characteristics. However, SG-DMOSFETs have problems such as the degradation of static characteristics and a high gate-oxide electric field. To solve these problems, we developed a SG-DMOSFET with floating p+ polysilicon (FPS-DMOSFET) and compared it with a conventional planar DMOSFET (C-DMOSFET) and a SG-DMOSFET through Technology Computer-Aided Design (TCAD) simulations. In the FPS-DMOSFET, floating p+ polysilicon (FPS) is inserted between the active gates to disperse the high drain voltage in the off state and form an accumulation layer over the entire junction field effect transistor (JFET) region, similar to a C-DMOSFET, in the on state. Therefore, the FPS-DMOSFET can minimize the degradation of static characteristics such as the breakdown voltage (BV) and specific on resistance (RON,SP) in the split-gate structure. Consequently, the FPS-DMOSFET can shorten the active gate length and achieve a gate-to-drain capacitance (CGD) that is less than those of the C-DMOSFET and SG-DMOSFET by 48% and 41%, respectively. Moreover, the high-frequency figure of merit (HF-FOM = RON,SP × CGD) of the FPS-DMOSFET is lower than those of the C-DMOSFET and SG-DMOSFET by 61% and 49%, respectively. In addition, the FPS-DMOSFET shows an EMOX of 2.1 MV/cm, which guarantees a gate oxide reliability limit of 3 MV/cm. Therefore, the proposed FPS-DMOSFET is the most appropriate device to be used in high-voltage and high-frequency electronic applications.

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Section: Introductionmentioning

confidence: 98%

3.3-kV 4H-SiC Split-Gate DMOSFET with Floating p+ Polysilicon for High-Frequency Applications

2021

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“…Yang et al [19] investigated a novel SiC UMOSFET by using a deep p + shielded region and current spreading layer. Besides, the stepped oxide, [20][21][22] split-gate (SG), [23][24][25] and thick bottomoxide structure [26][27][28] have been proposed to further improve the compromise relationship between E ox and R on,sp .…”

Section: Introductionmentioning

confidence: 99%

Low switching loss and increased short-circuit capability split-gate SiC trench MOSFET with p-type pillar

Shen

Wang²,

Li³

et al. 2023

Chinese Phys. B

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A split-gate SiC trench gate MOSFET with stepped thick oxide, source-connected split-gate (SG), and p-type pillar (p-pillar) surrounded thick oxide shielding region (GSDP-TMOS) is investigated by Silvaco TCAD simulations. The source-connected SG and p-pillar shielding regions are introduced to form an effective two-level shielding, which reduces the specific gate-drain charge (Q gd,sp) and the saturation current, thus reducing the switching loss and increasing the short-circuit capability. A p-pillar shielding region surrounded thick oxide efficiently protects gate oxide from peak electric field, thereby increasing the breakdown voltage (BV). Additionally, because of the high concentration on the n-type drift region, the electrons diffuse rapidly and the specific on-resistance (R on,sp) becomes smaller. In the end, compared with the bottom p+ shielded trench MOSFET (GP-TMOS), the Baliga figure of merit (BFOM, BV2/R on,sp) is increased by 169.6%, and the high-frequency figure of merit (HF-FOM, R on,sp×Q gd,sp) is significantly improved by 310%, respectively.

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“…the drain electrode [10]. However, the use of SG MOSFET will usually increase the resistance of the device under the same cell size [11]- [13], and make the electric field crowding in the gate oxide under high voltage [26], which will affect the reliability of the device for long-term use. The values of HF-FOM (Crss×Ron,sp) and HF-FOM 2 (Qgd×Ron,sp) are usually compared to measure the performance of the device under high-frequency operation [14]- [15].…”

Section: Introductionmentioning

confidence: 99%

Low Switching Loss Split-Gate 4H-SiC MOSFET With Integrated Heterojunction Diode

Wang

Bao

et al. 2022

IEEE J. Electron Devices Soc.

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A 4H-SiC MOSFET with p-type region injection and integrated split gate and heterojunction diode is proposed in this paper. Compared with the conventional MOSFET, the proposed structure has a lower on-resistance and switching loss. And the gate oxide layer has been well protected by the p-type region, which reduces the electric field in gate oxide layer at the off-state. The on-resistance of device can be greatly reduced by increasing the doping concentration of current spreading layer and will not cause a huge electric field in gate oxide layer. The specific on-resistance is decreased by about 27.8% and the static characteristic (BV 2 /Ron,sp) of the device is improved about 37.3%. SiC material has a high third quadrant turn-on voltage due to its wide band gap characteristics. The use of heterojunction integration can take place of parasitic body diode and reduce its turn-on voltage, avoid the bipolar degradation effect, and improves the reverse recovery characteristics. To evaluate the dynamic performance, the reverse transmission capacitance (Crss) and gate-drain charge (Qgd) of the proposed structure have been studied in this paper via numerical simulations. Based on the simulation, the HF-FOM (Crss×Ron,sp) and HF-FOM 2 (Qgd×R on,sp) of the proposed structure are decreased by about 87% and 86%, respectively. Meanwhile, the reverse turn-on voltage and reverse recovery characteristics are also improved, and the total energy loss decreases by about 37.3%.

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The limitation of the Split-Gate MOSFET(SG-MOSFET) at 3.3kV

Cited by 5 publications

References 8 publications

3.3-kV 4H-SiC Split-Gate DMOSFET with Floating p+ Polysilicon for High-Frequency Applications

3.3-kV 4H-SiC Split-Gate DMOSFET with Floating p+ Polysilicon for High-Frequency Applications

Low switching loss and increased short-circuit capability split-gate SiC trench MOSFET with p-type pillar

Low Switching Loss Split-Gate 4H-SiC MOSFET With Integrated Heterojunction Diode

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