The mechanism of hydrogen plasma passivation for poly-crystalline silicon thin film

In this work, the application of carrier-selective passivating contacts based on tunneling silicon-dioxide and ion-implanted poly-Si in front and rear contacted Si solar cells is presented. This paper addresses the need to minimize the contact recombination while still keeping high short circuit current. We aim to solve such trade-off with a novel solar cell architecture called Passivated Rear and Front ConTacts (PeRFeCT). Such design employs a selective passivating contact combined with standard homojunction on the front side in order to minimize contact recombination, while achieving high optical transparency and a full area passivating contact on the rear side. The opto-electrical modeling of this front/rear contacted architecture indicates a potential efficiency above 26%. As technology demonstration, we also report on the optimization of front surface field and processing of 2.8 Â 2.8 cm 2 wide solar cells leading to a 20.1% conversion efficiency.

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Silicon Solar Cell Architecture with Front Selective and Rear Full Area Ion‐Implanted Passivating Contacts

Ingenito

Limodio

Procel

et al. 2017

Solar RRL

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Influence of shadowing effect on morphology and microstructure of silicon thin film in chemical vapor deposition

Zhang¹,

Liu²,

Zhu³

2014

Acta Phys. Sin.

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Influences of gas incident angle () on surface morphology and microstructure of hydrogenated amorphous silicon (a-Si:H) thin films are investigated, which were grown using an oblique angle hot wire chemical vapor deposition (OAD-HWCVD) technique. An exponential relationship between the tan and RMS roughness is observed. The film surface morphology transforms from a self-affine surface into a mounded surface when the incident angle is larger than a critical angle c(60 c 75). Influences of on the microstructural properties of silicon thin films are characterized using Raman scattering and FT-IR measurements. As c, owing to the qusai-local shadowing effect, increasing increases the quantity and size of micro-voids, leading to the decrease of film density and quality. For c, the nonlocal shadowing effect causes the formation of large voids or cracks and the proportion of multi-hydride (SiHn, n 2) increases. Combined with the scaling theory, the relationship between the shadowing effect and the surface morphologies and microstructures of amorphous silicon thin films is discussed.

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The mechanism of hydrogen plasma passivation for poly-crystalline silicon thin film

Abstract: (李娟) a) † , Luo Chong(罗翀) a) , Meng Zhi-Guo(孟志国) a) , Xiong Shao-Zhen(熊绍珍) a) , and Hoi Sing Kwok(郭海威)) b)

Cited by 2 publications

References 19 publications

Silicon Solar Cell Architecture with Front Selective and Rear Full Area Ion‐Implanted Passivating Contacts

Silicon Solar Cell Architecture with Front Selective and Rear Full Area Ion‐Implanted Passivating Contacts

Influence of shadowing effect on morphology and microstructure of silicon thin film in chemical vapor deposition

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The mechanism of hydrogen plasma passivation for poly-crystalline silicon thin film

Abstract: (李 娟) a) † , Luo Chong(罗 翀) a) , Meng Zhi-Guo(孟志国) a) , Xiong Shao-Zhen(熊绍珍) a) , and Hoi Sing Kwok(郭海威)) b)

Cited by 2 publications

References 19 publications

Silicon Solar Cell Architecture with Front Selective and Rear Full Area Ion‐Implanted Passivating Contacts

Silicon Solar Cell Architecture with Front Selective and Rear Full Area Ion‐Implanted Passivating Contacts

Influence of shadowing effect on morphology and microstructure of silicon thin film in chemical vapor deposition

Contact Info

Product

Resources

About

Abstract: (李娟) a) † , Luo Chong(罗翀) a) , Meng Zhi-Guo(孟志国) a) , Xiong Shao-Zhen(熊绍珍) a) , and Hoi Sing Kwok(郭海威)) b)