The obtaining of Al–Ti10W90–Si(n) Schottky diodes and investigation of their interface surface states density

Afandiyeva, I. M.; Askerov, Sh. G.; Abdullayeva, L. K.; Aslanov, Sh.S.

doi:10.1016/j.sse.2007.05.021

Cited by 9 publications

(2 citation statements)

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“…For the fabrication of PtSi/n-Si (111) structures the method of planar technology and standard photolithography was used, traditionally used for the fabricating of the diodes with small geometrical sizes. Silicide film was deposited by the magnetron-sputtering method on single crystal n-type silicon (Pdoped) wafer Si (111), with 3 inch diameter, 0, 7 Ω•cm resistivity and 3, 5 μm thickness [26] . The condition of deposition process of Pt film with the thickness about 0, 6 μm is: the vacuum about 10 −4 Torr, as working gas was used Argon plasma, the temperature of preliminary heating of the substrate plates in chamber was 523 K during 250 s.…”

Section: Methodsmentioning

confidence: 99%

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Self-assembled patches in PtSi/n-Si (111) diodes

et al. 2018

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Using the effect of the temperature on the capacitance–voltage (C–V) and conductance–voltage (G/ω–V) characteristics of PtSi/n-Si (111) Schottky diodes the profile of apparent doping concentration (NDapp), the potential difference between the Fermi energy level and the bottom of the conduction band (Vn), apparent barrier height (ΦBapp), series resistance (Rs) and the interface state density Nss have been investigated. From the temperature dependence of (C–V) it was found that these parameters are non-uniformly changed with increasing temperature in a wide temperature range of 79–360 K. The voltage and temperature dependences of apparent carrier distribution we attributed to the existence of self-assembled patches similar the quantum wells, which formed due to the process of PtSi formation on semiconductor and the presence of hexagonal voids of Si (111).

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Section: Methodsmentioning

confidence: 99%

“…In our investigations the frequency of 500 kHz was used as the frequency of small AC signal (20 mV p-p ). In such case, it is possible a detection of a small contribution from surface states [3,4,24,26] .…”

Section: Methodsmentioning

confidence: 99%