The temperature dependence of the electrical resistivity of granular metals

Šimánek, E.

doi:10.1016/0038-1098(81)90059-4

Cited by 86 publications

(44 citation statements)

References 7 publications

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“…This ln͑͒ ϰ T −1/2 behavior has been frequently explained by the Efros-Shklovskii variable range hopping ͑ES-VRH͒, percolation-hopping model, and the Sheng model. [11][12][13] However, it has been determined that the ES-VRH model is not sufficient to explain reasonably the conduction mechanism in this kind of Si nanocrystal films. 9 In relation to this, Sheng 13 derived an ln͑͒ ϰ T −1/2 formula for granular metals.…”

Section: Resultsmentioning

confidence: 99%

Influence of nanocrystal size on the transport properties of Si nanocrystals

Zhou

Usami

Rafiq

et al. 2008

Journal of Applied Physics

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In this study, we have investigated the carrier transport mechanism across silicon nanocrystals with the Al/ p-Si/ Si nanocrystals/Al structure. Sizes of silicon nanocrystals were controlled at diameters of ϳ6, ϳ8, and ϳ11 nm. It is shown that the conductivity of silicon nanocrystals, both as-grown and annealed, exhibits ϰ exp͓−͑T 0 / T͔͒ 1/2 behavior under low electrical fields and over a wide temperature range. The phenomenon of material constant T 0 increasing with the decrease of nanocrystal size has been observed. Considering nanocrystal size effect, experimental results can be explained by the hopping-percolation model. The influence of nanocrystal size on transport properties has been discussed. Based on this model, changes in T 0 after annealing treatment are attributed to an increase in effective decay length.

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Section: Resultsmentioning

confidence: 99%

Influence of nanocrystal size on the transport properties of Si nanocrystals

Zhou

Usami

Rafiq

et al. 2008

Journal of Applied Physics

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“…We observe a ln͑͒ vs 1/T 1/2 dependence over a wide range of temperature ͑30-200 K͒, which can be attributed to either the percolation-hopping conduction model of Šimánek 14 or to Efros-Shklovskii variable range hopping ͑ES-VRH͒, where Coulomb interactions are considered in the hopping process. 15 Assuming hopping sites only on the nanocrystals, our data fit well with the percolation-hopping model.…”

Section: Introductionmentioning

confidence: 89%

Hopping conduction in size-controlled Si nanocrystals

Rafiq

Tsuchiya

Mizuta

et al. 2006

Journal of Applied Physics

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We investigate the temperature dependence of conduction in size-controlled silicon nanocrystals. The nanocrystals are ϳ8 nm in diameter, covered by ϳ1.5 nm thick SiO 2 shells. In 300 nm thick films for temperatures T from 30 to 200 K, the conductivity follows a ln͑͒ vs 1 / T 1/2 dependence. This may be associated with either percolation-hopping conductance or Efros-Shklovskii variable range hopping. Assuming hopping sites only on the nanocrystals, the data agree well with the percolation model.

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“…In addition, we took one sample out of each group to apply the H 2 annealing treatment at temperature of 430 0 C to make comparison with asgrown. The percolation hopping model [5] was chosen to make a comparison with the experimental results, because the expression of T 0 in Eq.1 is dependent on the nanocrystal dimensions. …”

Section: Experiments and Discussionmentioning

confidence: 99%