The trench MOS barrier Schottky (TMBS) rectifier

Mehrotra, M.; Baliga, B. Jayant

doi:10.1109/iedm.1993.347222

Cited by 31 publications

(16 citation statements)

References 4 publications

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“…L'idée commune à ces concepts est la modification structurelle de la zone N -. La Superjonction [20], le MOS à « tranchées profondes à déplétion MOS latérale » − connu sous le nom de transistor OBVDMOS [21] − et la FLI-diode [22] seront présentés dans les chapitres suivants.…”

Section: I5 Présentation Des Nouvelles Structuresunclassified

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Conception de transistors MOS haute tension (1 200 volts) pour l'électronique de puissance

Théolier

2010

E.J.E.E

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Section: I5 Présentation Des Nouvelles Structuresunclassified

“…Les diodes Schottky, utilisées pour la faible tension, ont connu une nette amélioration ces dernières années grâce à l'apparition du concept de « tranchée profondes à déplétion MOS latérale » [21] : ce sont les « Trench MOS Barrier Schottky » (TMBS).…”

Section: I53 Les Composants à « Tranchées Profondes à Déplétion Mounclassified

Conception de transistors MOS haute tension (1 200 volts) pour l'électronique de puissance

Théolier

2010

E.J.E.E

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“…By contrast, the pin junction rectifier has low forward drop and high current capability due to conductivity modulation, but has slow reverse recovery characteristics due to minority carrier storage. To combine the best features of these two rectifiers, hybrid rectifier structures, such as the Junction Barrier Schottky (JBS), Merged Pin/Schottky (MPS) and MOS Barrier Schottky (MBS) rectifiers have been proposed and have been demonstrated in silicon (Wilamowski 1983;Baliga 1984;Baliga & Chang 1987;Mehrotra & Baliga 1995). The trench version of the MBS rectifier is schematically shown in Fig Whether a unipolar or a bipolar rectifier is preferred depends on many device parameters, such as reverse blocking voltage, forward current density, maximum allowable reverse current density, operating temperature and switching frequency.…”

Section: Power Rectifiersmentioning

confidence: 99%

“…In order to achieve good reverse blocking characteristics while maintaining a Schottky forward conduction and fast reverse recovery characteristics, several modern rectifiers, such as Junction Barrier Schottky (JBS) (Wilamowski 1983;Baliga 1984), Dual Metal Trench (DMT) Schottky and Trench MOS Barrier Schottky (TMBS) (Mehrotra & Baliga 1995) rectifiers, have been explored. The physical principle used to reduce the leakage current is the same -to completely deplete the Schottky mesa regions under the Schottky junction so as to suppress the electric field from rising at the Schottky junction when the bias at the substrate cathode is increased.…”

Section: Hybrid Rectifiersmentioning

confidence: 99%

“…The original Si device reported in (Mehrotra & Baliga 1995) was shown to be capable of achieving higher than parallel plane breakdown voltage with little compromise in the forward conduction capability. We have fabricated a polysilicon planarized Ni-TMBS in 4H-SiC, the forward and reverse characteristics of which are compared to that of simultaneously fabricated Ni SBD and PiN rectifiers are illustrated in Fig.…”

Section: Hybrid Rectifiersmentioning

confidence: 99%

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High-Temperature Electronics in Europe

Dmitriev¹,

Chow²,

DenBaars³

et al. 2000

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Support is provided by a variety of U.S. government agencies, including ONR, DoC, and NSF.ITRI's mission is two-pronged: (1) to inform U.S. policymakers, strategic planners, and managers of the state of selected technologies in foreign countries in comparison to the United States; and (2) to identify opportunities for international cooperation among countries and collaboration among researchers. ITRI assessments cover basic research, advanced development, and applications. Panels of typically six technical experts conduct these assessments. Panelists are leading authorities in their fields, technically active, and knowledgeable about U.S. and foreign research programs. As part of the assessment process, panels visit and carry out extensive discussions with foreign scientists and engineers in their labs.The ITRI staff at Loyola College helps select topics, recruits expert panelists, arranges study visits to foreign laboratories, organizes workshop presentations, and finally, edits and disseminates the final reports. HIGH-TEMPERATURE ELECTRONICS IN EUROPE August 2000Vladimir Dmitriev (Chair) T. Paul Chow Steven P. DenBaars Michael S. Shur Michael G. Spencer George White This document was sponsored by the Office of Naval Research (ONR) and the National Science Foundation (NSF) under ONR Grant NOOO14-99-1-0529 and NSF Cooperative Agreement ENG-9707092, both awarded to the International Technology Research Institute at Loyola College in Maryland. The government has certain rights in this material. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the authors and do not necessarily reflect the views of the United States government, the authors' parent institutions, or Loyola College. ABSTRACTThis final report of ITRI's panel on high-temperature electronics in Europe consists of an executive summary, an introductory chapter, and six chapters by panel members on various aspects of wide bandgap electronics. The report also contains site reports for the various companies, labs, universities, and government offices that the panel visited in Europe. Comparisons are made between developments in Europe and the United States. Principal findings include: • European scientists and engineers see optoelectronics and high-power, high-frequency electronics as the major application opportunities for wide bandgap semiconductors.• The size of the GaN and SiC technology and device development effort in Europe is comparable with that in the United Statews.• Europe is ahead of the U.S. in in bulk GaN growth technology.• The United States is currently ahead in GaN-based device developments for light emitters, and high-power/high-frequency applications.• In silicon carbide technology, the U.S. is ahead in SiC bulk crystal and epitaxial production.• In R&D silicon carbide effort, European organization both academic and industrial have recently demonstrated outstanding results in both material growth (bulk and epi) and device development proving the leading position in the world; in the area ...

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Silicon Carbide Power Devices

Chow

2000

Handbook of Thin Film Devices

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The trench MOS barrier Schottky (TMBS) rectifier

Cited by 31 publications

References 4 publications

Conception de transistors MOS haute tension (1 200 volts) pour l'électronique de puissance

Conception de transistors MOS haute tension (1 200 volts) pour l'électronique de puissance

High-Temperature Electronics in Europe

Silicon Carbide Power Devices

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