Theory of optical beam induced current images of defects in semiconductors

Abstract

Electronbeaminduced current near the localized defects in a polycrystalline semiconductor Erratum: On the theory of electronbeaminduced current contrast from pointlike defects in semiconductors [J.We present a model of image formation in scanning optical microscopes operating in the optical beam induced current mode. A perturbation analysis is used, a point spread function is introduced, and specific images of point defects obtained. It is found that the resolution is not limited by the diffusion length.

Three-dimensional nanometric sub-surface imaging of a silicon flip-chip using the two-photon optical beam induced current method

“…OBIC imaging is particularly suited to the inspection of semiconductor devices [6] due to the fact that it is a noncontact, non-destructive testing method. This created a great interest in this technique throughout the 1980s [7][8][9][10][11]. However, OBIC imaging cannot perform depthresolved analysis because absorption takes place throughout the entire volume of the beam within the sample, generating carriers over a large axial range.…”

Optimizing pulsed OBIC technique for ESD defect localization

“…The photocurrent is always greater than the photocurrent obtained on the reference device. In order to understand the phenomenon involved in this curve, let us just be reminded of the way the photocurrent is created [1]. It is composed of two parts: a drift current and a diffusion current.…”

“…The pulsed optical beam-induced current (OBIC) technique [1], [2], [4] is one of them, which is based on the photoelectric laser stimulation of the device under test (DUT) at a micrometric scale. The suitability of this technique to localize failure sites resulting from electrostatic discharges (ESDs) has previously been demonstrated [2].…”

Solid immersion lens applications for nanophotonic devices

“…OBIC imaging is particularly suited to the inspection of semiconductor devices [59] due to the fact that it is a non-contact, non-destructive testing method. This created a great interest in this technique throughout the 1980s [60][61][62][63][64]. However, there are a few limitations associated with this imaging mode.…”

“…17. Angular spectrum tailoring for improved IC characterisation [60]. The dashed lines represent low-NA rays that are incident on the SiO 2 interface at angles below the critical angle and, as a result, reach the metalization layer; these rays are blocked by a suitable spatial filter which can improve device layer contrast.…”