Thermal desorption effects in chemical vapor deposition of silicon nanoparticles

Leach, W. Thomas; Zhu, Jiaxing; Ekerdt, John G.

doi:10.1016/s0022-0248(02)01472-0

Cited by 34 publications

(27 citation statements)

References 21 publications

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“…2 SiO. [21,31,32] Using scanning reflection electron microscopy (SREM), Miyata et al showed that the decomposition rate of SiO 2 depends on the formation temperature of oxides. [33] For oxides formed at T > 800 C, the decomposition rate of oxides at T = 600 C is less than 0.01 nm min…”

Section: ±10mentioning

confidence: 99%

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Incubation Time during Chemical Vapor Deposition of Si onto SiO₂ from Silane

Kajikawa¹,

Tsuchiya

Noda

et al. 2004

Chemical Vapor Deposition

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na edge and the microwave plasma ball (or discharging sphere) is immobilized at the tip. The substrate distance, defined as the gap between the tip of the antenna edge and the substrate, can be adjusted in the range 0±80 mm by means of the up or down movement of a substrate holder. A two inchsized heater was used as the substrate holder. Its temperature was monitored by a thermocouple or an IR pyrometer. Each Si substrate was coated with a 0.5±5 nm catalytic film of Ni or Fe, by E-beam evaporation, and magnetron sputtering, respectively, without removing its native SiO 2 layer. Pure hydrogen and methane (over 99.9999 % pure) were used as reactant gases for the growth of CNFs. In each experimental run, the flow rates of hydrogen and methane were set as constants of 45 sccm and 5 sccm, respectively, while the chamber pressure, microwave power, and growth time were set at 20 torr, 60 W, and 3 min, respectively.

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Section: ±10mentioning

confidence: 99%

“…Using temperature programmed desorption (TPD), Leach et al [21] reported a different value, and showed that the rate of desorption of Si adsorbate accompanying decomposition of SiO 2 can be expressed as k des = 1 10 14 exp(±2.7[eV]/kT). For T = 600 C, k des = 0.024 s ±1 with 0.36 nm min ±1 .…”

Section: ±1mentioning

confidence: 99%

Incubation Time during Chemical Vapor Deposition of Si onto SiO₂ from Silane

Kajikawa¹,

Tsuchiya

Noda

et al. 2004

Chemical Vapor Deposition

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“…According to Leach et al [9], mobile silicon adatoms are present during the deposition of silicon atoms on dielectric surfaces such as SiO 2 . These adatoms are thought to accumulate and cluster to form stable nuclei that grow to cover the surface and eventually coalesce [10].…”

Section: Introductionmentioning

confidence: 99%

Development of an original model for the synthesis of silicon nanodots by Low Pressure Chemical Vapor Deposition

Cocheteau

Mur

Billon

et al. 2008

Chemical Engineering Journal

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“…Various methods have been developed to fabricate Si nanopowder, eg plasma-enhanced chemical vapor deposition (PECVD) [6], laser ablation [7], and arc-discharge [8]. These methods require expensive materials such as SiH 4 , and moreover, the fabrication rate of Si nanopowder is considerably low.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of Si nanopowder and application to hydrogen generation and photoluminescent material

Kobayashi

Imamura

Matsumoto

et al. 2017

Journal of Electrical Engineering

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Si nanopowder is fabricated using the simple beads milling method. Fabricated Si nanopowder reacts with water in the neutral pH region between 7 and 9 to generate hydrogen. The hydrogen generation rate greatly increases with pH, while pH does not change after the hydrogen generation reaction. In the case of the reactions of Si nanopowder with strong alkaline solutions (eg pH13.9), 1600 mL hydrogen is generated from 1 g Si nanopowder in a short time (eg 15 min). When Si nanopowder is etched with HF solutions and immersed in ethanol, green photoluminescence (PL) is observed, and it is attributed to band-to-band transition of Si nanopowder. The Si nanopowder without HF etching in hexane shows blue PL. The PL spectra possess peaked structure, and it is attributed to vibronic bands of 9,10-dimethylantracene (DMA) in hexane solutions. The PL intensity is increased by more than 3,000 times by adsorption of DMA on Si nanopowder.

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Thermal desorption effects in chemical vapor deposition of silicon nanoparticles

Cited by 34 publications

References 21 publications

Incubation Time during Chemical Vapor Deposition of Si onto SiO₂ from Silane

Incubation Time during Chemical Vapor Deposition of Si onto SiO₂ from Silane

Development of an original model for the synthesis of silicon nanodots by Low Pressure Chemical Vapor Deposition

Fabrication of Si nanopowder and application to hydrogen generation and photoluminescent material

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Thermal desorption effects in chemical vapor deposition of silicon nanoparticles

Cited by 34 publications

References 21 publications

Incubation Time during Chemical Vapor Deposition of Si onto SiO2 from Silane

Incubation Time during Chemical Vapor Deposition of Si onto SiO2 from Silane

Development of an original model for the synthesis of silicon nanodots by Low Pressure Chemical Vapor Deposition

Fabrication of Si nanopowder and application to hydrogen generation and photoluminescent material

Contact Info

Product

Resources

About

Incubation Time during Chemical Vapor Deposition of Si onto SiO₂ from Silane

Incubation Time during Chemical Vapor Deposition of Si onto SiO₂ from Silane