Thermal-spike treatment of ion-induced grain growth: Theory and experimental comparison

Alexander, Dale E.; Was, Gary S.

doi:10.1103/physrevb.47.2983

Cited by 98 publications

(46 citation statements)

References 22 publications

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“…[13][14][15] However, radiation has also been found to induce grain boundary motion and grain growth in both pure and alloyed metals. [16][17][18] Some previous work utilizing in situ ion irradiation transmission electron microscopy (TEM) investigated microstructural stability in several nanocrystalline metal systems as a function of temperature, and ion species, energy, and fluence. 19 Motivated by the work of Vineyard, 20 Kaoumi et al 19 proposed a model for irradiation-induced grain growth based on the direct effects of thermal spikes on grain boundary properties.…”

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confidence: 99%

Unraveling irradiation induced grain growth with in situ transmission electron microscopy and coordinated modeling

Bufford

Abdeljawad

Foiles

et al. 2015

Applied Physics Letters

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Nanostructuring has been proposed as a method to enhance radiation tolerance, but many metallic systems are rejected due to significant concerns regarding long term grain boundary and interface stability. This work utilized recent advancements in transmission electron microscopy (TEM) to quantitatively characterize the grain size, texture, and individual grain boundary character in a nanocrystalline gold model system before and after in situ TEM ion irradiation with 10 MeV Si. The initial experimental measurements were fed into a mesoscale phase field model, which incorporates the role of irradiation-induced thermal events on boundary properties, to directly compare the observed and simulated grain growth with varied parameters. The observed microstructure evolution deviated subtly from previously reported normal grain growth in which some boundaries remained essentially static. In broader terms, the combined experimental and modeling techniques presented herein provide future avenues to enhance quantification and prediction of the thermal, mechanical, or radiation stability of grain boundaries in nanostructured crystalline systems.

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confidence: 99%

Unraveling irradiation induced grain growth with in situ transmission electron microscopy and coordinated modeling

Bufford

Abdeljawad

Foiles

et al. 2015

Applied Physics Letters

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“…This is attributed to the improvement in crystallinity. Such a type of enhancement in grain size after irradiation was reported by Alexander and Was [10]. The observed d values are compared with the standard JCPDS data [11] indicating that the films are of orthorhombic structure.…”

Section: Structural Propertiesmentioning

confidence: 83%

Modifications of structural, optical and electrical properties of nanocrystalline bismuth sulphide by using swift heavy ions

Ahire

Sagade

Chavhan

et al. 2009

Current Applied Physics

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“…Samples implanted to 10 12 (A) and 10 13 (B) Tm cm À2 exhibit sharp EL peaks originating from Si (1.15 lm) and six originating from Tm (1.233, 1.251, 1.269, 1.291, 1.311, and 1.326 lm). In the sample implanted to 10 14 Tm cm À2 (C) we register only a weak peak from Si, while in the one implanted to 10 15 Tm cm À2 (D) there is no EL response. The Si EL yield in (A) is higher than in (B), because the loops are smaller and denser.…”

Section: à2mentioning

confidence: 99%

“…The image in Fig. 5(b) was taken from a sample implanted to 10 13 Tm cm À2 after previous implantation of B but prior to the postimplantation annealing. It confirms the previously discussed initial formation of dislocation loops due to thermal spikes induced in Si by heavy Tm ion irradiation.…”

Section: à2mentioning

confidence: 99%

“…20); 8 there is also evidence of the influence of ion induced thermal spikes in broadening of tracer profiles in silicon 9 and numerous reports on the grain growth in polycrystalline metallic films upon ion irradiation. [10][11][12][13][14] Nevertheless, nucleation and growth of extrinsic crystalline defects (dislocation loops in this case) in a host material under ion induced thermal spikes has not yet been reported. 15 During implantation the targets were held at room temperature, and inclined by 7 off normal to avoid channeling.…”

Section: Introductionmentioning

confidence: 99%

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Role of heavy ion co-implantation and thermal spikes on the development of dislocation loops in nanoengineered silicon light emitting diodes

Milosavljević¹,

Lourenço²,

Gwilliam³

et al. 2011

Journal of Applied Physics

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ZnO nanorod/GaN light-emitting diodes: The origin of yellow and violet emission bands under reverse and forward bias J. Appl. Phys. 110, 094513 (2011) Temperature-dependence of the internal efficiency droop in GaN-based diodes Appl. Phys. Lett. 99, 181127 (2011) Localized surface plasmon-enhanced electroluminescence from ZnO-based heterojunction light-emitting diodes Appl. Phys. Lett. 99, 181116 (2011) Performance enhancement of blue light-emitting diodes with AlGaN barriers and a special designed electronblocking layer J. Appl. Phys. 110, 093104 (2011) A light emitting diode based photoelectrochemical screener for distributed combinatorial materials discovery Rev. Sci. Instrum. 82, 114101 (2011) Additional information on J. Appl. Phys. Microstructural and electroluminescence measurements are carried out on boron implanted dislocation engineered silicon light emitting diodes (LEDs) co-implanted with the rare earth thulium to provide wavelength tuning in the infra-red. Silicon LEDs operating in the range from 1.1-1.35 lm are fabricated by co-implantation of boron and thulium into n-type Si (100) wafers and subsequently rapid thermally annealed to activate the implants and to engineer the dislocation loop array that is crucial in allowing light emission. Ohmic contacts are applied to the p and n regions to form conventional p-n junction LEDs. Electroluminescence is obtained under normal forward biasing of the devices. The influence of implantation sequence (B or Tm first), ion dose, and the post-implantation annealing on the microstructure and electroluminescence from the devices is studied. A clear role of the heavy-ion Tm co-implant in significantly modifying the boron induced dislocation loop array distribution is demonstrated. We also identify the development of dislocation loops under thermal spikes upon heavy ion (Tm) implantation into Si. The results contribute to a better understanding of the basic processes involved in fabrication and functioning of co-implanted devices, toward achieving higher light emission efficiency.

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Thermal-spike treatment of ion-induced grain growth: Theory and experimental comparison

Cited by 98 publications

References 22 publications

Unraveling irradiation induced grain growth with in situ transmission electron microscopy and coordinated modeling

Unraveling irradiation induced grain growth with in situ transmission electron microscopy and coordinated modeling

Modifications of structural, optical and electrical properties of nanocrystalline bismuth sulphide by using swift heavy ions

Role of heavy ion co-implantation and thermal spikes on the development of dislocation loops in nanoengineered silicon light emitting diodes

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