High-resolution patterning of quantum
dot (QD) films is one of
the preconditions for the practical use of QD-based emissive display
platforms. Recently, inkjet printing and transfer printing have been
actively developed; however, high-resolution patterning is still limited
owing to nozzle-clogging issues and coffee ring effects during the
inkjet printing and kinetic parameters such as pickup and peeling
speed during the transfer process. Consequently, employing direct
optical lithography would be highly beneficial owing to its well-established
process in the semiconductor industry; however, exposing the photoresist
(PR) on top of the QD film deteriorates the QD film underneath. This
is because a majority of the solvents for PR easily dissolve the pre-existing
QD films. In this study, we present a conventional optical lithography
process to obtain solvent resistance by reacting the QD film surface
with diethylzinc (DEZ) precursors using atomic layer deposition. It
was confirmed that, by reacting the QD surface with DEZ and coating
PR directly on top of the QD film, a typical photolithography process
can be performed to generate a red/green/blue pixel of 3000 ppi or
more. QD electroluminescence devices were fabricated with all primary
colors of QDs; moreover, compared to reference QD-LED devices, the
patterned QD-LED devices exhibited enhanced brightness and efficiency.