Thin-Film Electroluminescent Device Employing Ta₂O₅ RF Sputtered Insulating Film

Abstract

We give an analytical solution for the nonlinear equation of motion of an electron beam in the radial direction of a superconducting tube, for the case of electrons moving close to the tube axis, in the complete flux expulsion model. Hence, we deduce a general expression for the focusing length that is dependent on the parameters of the superconducting tube and electron stream. Our focusing length is inversely proportional to x 0 , the width of the electron beam, and is in good agreement with experimental data.

The effect of substrate material on the properties of tantalum oxide films

“…After treatment in oxygen plasma, ε increases (Fig. 3, curve 2) and amounts to 22-23, which is close to the reported data [8]. The static volt-ampere characteristics do not depend on the voltage polarity U.…”

Structural and electrical properties of crystalline (1−x)Ta2O5–xAl2O3 thin films fabricated by metalorganic solution deposition technique

“…[1][2][3][4][5] In this letter, we report the fabrication of the (1 Ϫx)Ta 2 O 5 -xAl 2 O 3 thin films by metalorganic solution deposition ͑MOSD͒ technique. MOSD processing has been extensively used in thin film technology because of easier composition control, good homogeneity, and uniform deposition over a large substrate surface area.…”

“…The leakage current density was found to be much improved compared to Ta 2 O 5 thin films reported by various techniques. 5,7,8,[12][13][14][15]18 The C -V measurements were conducted on MIM capacitors to analyze the bias stability. Figure 6 shows the C -V curves of Pt/0.9Ta 2 O 5 -0.1Al 2 O 3 /Pt capacitors obtained by applying a small ac signal of 10 mV amplitude and of 100 kHz frequency across the capacitor while the dc electric field was swept from a negative bias to positive bias.…”

“…Structural and electrical properties of crystalline "1؊x…Ta 2 O 5 -xAl 2 5 thin films. The measured small signal dielectric constant and dissipation factor at 100 kHz were 42.8 and 0.005, respectively.…”

Electrical properties of Ta–Sn–O films on indium tin oxide electrodes

“…[1][2][3] Furthermore, these films have also been used for insulating films for electroluminescent ͑EL͒ display devices. 4,5 In the EL devices, the insulating films are required to be prepared on transparent electrodes such as indium tin oxide ͑ITO͒ electrodes. Therefore, the electrical properties of the Ta 2 O 5 films on the ITO electrodes play an important role in improving the performances of the EL devices.…”