Thin-film transistor fabrication for high brightness reconfigurable vacuum fluorescent displays

Troxell, John R.; Harrington, Marie I.; Shi, Qijia; Nachtegall, D.E.; Hile, John W.

doi:10.1109/16.491246

Cited by 6 publications

(2 citation statements)

References 4 publications

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“…Commercial applications have begun using polysilicon TFTs as the driving units of florescent displays. Such driving units has strict requirements, such as a firm threshold voltage to provide stable illumination, high density to provide high pixel resolution and a high driving current to enhance the brightness [3,4]. These requirements will become more difficult in the future as displays become more advanced.…”

Section: Introductionmentioning

confidence: 99%

Non-classical polycrystalline silicon thin-film transistor with embedded block-oxide for suppressing the short channel effect

Lin

Huang

2008

Semicond. Sci. Technol.

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In this paper, a polycrystalline silicon (polysilicon) thin-film transistor with a block oxide enclosing body, BTFT, is fabricated and investigated. By utilizing the block-oxide structure of thin-film transistors, the BTFT is shown to suppress the short channel effect. This proposed structure is formed by burying self-aligned oxide spacers along the sidewalls of the source and drain junctions, which reduces the P-N junction area, thereby reducing the junction capacitance and leakage current. Measurements demonstrate that the BTFT eliminates the punch-through effect even down to gate lengths of 1.5 µm, whereas the conventional TFT suffers serious short channel effects at this gate length.

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Section: Introductionmentioning

confidence: 99%

Non-classical polycrystalline silicon thin-film transistor with embedded block-oxide for suppressing the short channel effect

Lin

Huang

2008

Semicond. Sci. Technol.

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“…Polysilicon thin-film transistors (poly-Si TFTs) are used in active-matrix liquid-crystal displays (AMLCDs), because such TFTs meet an AMCLD's needs for compact units (to achieve high pixel resolution) and high driving currents (to enhance the brightness of fluorescent displays) [1]. They are also used in other analogue/digital circuit applications [2].…”

Section: Introductionmentioning

confidence: 99%

Characteristics and reliability of a polysilicon thin-film transistor with a multi-trenched body

Huang¹,

Lin²,

Jheng³

2008

Semicond. Sci. Technol.

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This paper describes a polysilicon thin-film transistor (TFT) with a multi-trenched body that has been fabricated and found to suppress the off-state leakage current without degrading the on-state current or other electric properties. The thin-film structure minimizes carrier scattering through the polysilicon's grain-boundary traps. In addition to this effect, our multi-trenched structure reduces the off-state current by 50% compared to a conventional TFT. The effects of high temperature and dc hot-carrier stress are also measured in comparison to a conventional TFT. At 100 • C, the multi-trenched-body TFT has a higher output saturation current. After 10 000 s of stress testing, the trench-bodied structure continues to outperform the conventional TFT.

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Flat Panel Displays for Portable Systems

Sarma

Akinwande

1996

Technologies for Wireless Computing

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Thin-film transistor fabrication for high brightness reconfigurable vacuum fluorescent displays

Cited by 6 publications

References 4 publications

Non-classical polycrystalline silicon thin-film transistor with embedded block-oxide for suppressing the short channel effect

Non-classical polycrystalline silicon thin-film transistor with embedded block-oxide for suppressing the short channel effect

Characteristics and reliability of a polysilicon thin-film transistor with a multi-trenched body

Flat Panel Displays for Portable Systems

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