Thin films of metal oxides on silicon by chemical vapor deposition with organometallic compounds. I

MOCVD of ZrO2 and HfO2 Thin Films from Modified Monomeric Precursors

“…Metal-organic compounds such as b-diketonates and classical or functional alkoxides are often used as precursors for the MOCVD of oxide materials. [6][7][8][9][10][11][12] However, deficiencies still exist with respect to vapor pressure and thermal stability. There is a need for tailored precursors to overcome the problems associated with most conventionally used ones.…”

MOCVD and ALD of High‐k Dielectric Oxides Using Alkoxide Precursors

“…[31] The b-diketonate [Zr(thd) 4 ] (thd = 2,2,6,6-tetramethylheptane-3,5-dionate) has been successfully used for the MOCVD of high-purity ZrO 2 , [31,32] although it is also relatively involatile and requires high substrate temperatures (> 600°C) for oxide growth. The fluorinated complexes [Zr(tfac) 4 ] and [Hf(tfac) 4 ] (tfac = 1,1,1-trifluoropentane-2,4-dionate) are more volatile, [33] but the presence of fluorine, which can react adversely with the Si substrate, is highly undesirable. Recently, two new b-diketonate complexes, Zr(tod) 4 , and Hf(tod) 4 (tod = 2,7,7-trimethyl-3,5-octanedionate) have been used to deposit ZrO 2 and HfO 2 by liquid-injection MOCVD.…”

Deposition of HfO2 Films by Liquid Injection MOCVD Using a New Monomeric Alkoxide Precursor, [Hf(dmop)4]

“…For instance, HfCl 4 is a low volatility solid which needs substrate temperatures of 800 C or greater for oxide deposition. [10] Although the fluorinated complex [Hf(tfac) 4 ] is more volatile, [11] the presence of fluorine can lead to etching of the silicon substrate. The metal nitrate complex [Hf(NO 3 ) 4 ] has been used for the MOCVD of high purity HfO 2 at low growth temperatures, [12] but anhydrous metal nitrate complexes are hazardous, highly reactive oxidants.…”