Thin low-k SiOC(N) dielectric / ruthenium stacked barrier technology

We investigate the emissions of atomic potassium excited by two photons near the 4S 1/2 -6S 1/2 transition. Radiation near the 6S 1/2 -4P 3/2,1/2 and 4P 3/2,1/2 -4S 1/2 transitions are studied for the unidirectional and the bidirectional cases, respectively. It is shown that the total output intensity increases considerably for the bidirectional propagation. This is attributed to the effective increase of the Doppler free excitation and the cancellation of the quantum interference effect that is associated with the multiple paths of excitation of certain states.

Section: Resultsmentioning

confidence: 99%

Section: Electrical Characteristicsmentioning

confidence: 98%

Fabrication of 70-nm-Pitch Two-Level Interconnects by using Extreme Ultraviolet Lithography

Nakamura¹,

Oda²,

Soda³

et al. 2011

“…By using this two-step sputtering process, amorphous Ru (a-Ru) and polycrystalline Ru (p-Ru) with different film morphologies were obtained for the lower and upper layers, respectively, resulting in a good barrier property against the diffusion of Cu atoms or the drift of Cu ions. 28) The film thicknesses of a-Ru and p-Ru were 5 and 5 nm, respectively. The stacked Ru films are called the ''Ru barrier metal'' throughout this paper.…”

Section: Air-gap Formation Processmentioning

confidence: 99%

Novel Air-gap Formation Technology Using Ru Barrier Metal for Cu Interconnects with High Reliability and Low Capacitance

Takigawa¹,

Tarumi²,

Shiohara³

et al. 2011

A novel technology for obtaining low-capacitance Cu interconnects with air gaps has been proposed. Using a Ru barrier metal as a self-mask, a Cu interconnect was effectively protected from losing its cross-sectional shape during the intermetal dielectric etching process. The wiring capacitance with air-gaps was about 30% lower than that of the conventional low-k (k = 2.65)/Cu structure without air-gaps. The time-dependent dielectric breakdown (TDDB) lifetime of the air-gap interconnect with a Ru barrier was 100 times longer than that of the low-k/Cu structure. These results indicate that an air-gap interconnect with a Ru barrier metal can be an effective solution to boost the circuit operating speed and to reduce the power dissipation without the degradation of interconnect reliability for devices of 45 nm nodes and beyond.

“…One of the choices is the ruthenium (Ru) film because of its low electrical resistivity of 7.6 µΩ cm (at 273 K) and excellent compatibility with Cu electroplating, since Cu direct plating is thought to be possible without fabricating a seed Cu layer by PVD. [52][53][54][55][56][57][58][59] However, Ru is an inert metal and difficult to remove by chemical reaction using conventional CMP slurries. Moreover, the PVD target is very costly.…”

Section: Galvanic Corrosionmentioning

confidence: 99%

“…44,59) As a result, it has not been used in mass production yet even after more than ten years of its development worldwide. [52][53][54][55][56][57][58][59]…”

Section: Galvanic Corrosionmentioning

confidence: 99%

Electrochemical study on metal corrosion in chemical mechanical planarization process

Kondo

Ichige

Otsuka

2017

Self Cite

Typical metal corrosions caused by the chemical mechanical planarization (CMP) process are discussed in this review paper. By categorizing them into seven kinds of corrosion, namely, chemical corrosion, crevice corrosion, crystal-orientation-dependent corrosion, narrow trench corrosion, photocorrosion, galvanic corrosion, and electrostatic-charge induced corrosion, we discuss their mechanisms and how to suppress them on the basis of electrochemical studies. Moreover, we demonstrate the usefulness of three-dimensional pH–potential diagrams for predicting corrosion issues in an actual CMP process.