Three-dimensional characterization of bipolar transistors in a submicron BiCMOS technology using integrated process and device simulation

Pinto, M.; Boulin,; Rafferty,; Smith, Trevor A.; Coughran,; Kizilyalli,; Thomä,

doi:10.1109/iedm.1992.307507

Cited by 34 publications

(4 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Such capabilities make it a particularly suitable numerical tool for continuum-based modeling of nonequilibrium transport and equilibrium electrostatics in bioelectrical systems. Previously, PROPHET has been used extensively in the modeling and simulation of semiconductor-based processes (15) and devices (16). It has recently been applied to solving coupled PoissonNernst-Planck equations in the modeling of charge transport in ompF porin ion channels (17).…”

Section: Theoretical Modelsmentioning

confidence: 99%

Prediction of protein orientation upon immobilization on biological and nonbiological surfaces

Talasaz

Nemat‐Gorgani

Liu

et al. 2006

Proc. Natl. Acad. Sci. U.S.A.

View full text Add to dashboard Cite

We report on a rapid simulation method for predicting protein orientation on a surface based on electrostatic interactions. New methods for predicting protein immobilization are needed because of the increasing use of biosensors and protein microarrays, two technologies that use protein immobilization onto a solid support, and because the orientation of an immobilized protein is important for its function. The proposed simulation model is based on the premise that the protein interacts with the electric field generated by the surface, and this interaction defines the orientation of attachment. Results of this model are in agreement with experimental observations of immobilization of mitochondrial creatine kinase and type I hexokinase on biological membranes. The advantages of our method are that it can be applied to any protein with a known structure; it does not require modeling of the surface at atomic resolution and can be run relatively quickly on readily available computing resources. Finally, we also propose an orientation of membrane-bound cytochrome c, a protein for which the membrane orientation has not been unequivocally determined.electric double layer ͉ electrostatic simulations ͉ orientation flexibility A dsorption of proteins on solid interfaces has become an area of great theoretical and practical interest because of the recently extensive use of immobilized proteins and applications involving the catalytic potential of immobilized enzymes. Thus with the advent of protein microarrays and other solid miniaturized devices involving proteins, combined with applications in biomedical material engineering and biosensors, a greater need for defining the interactions of proteins with various surfaces has become evident. Accordingly, information on the orientation by which a protein may encounter the surface for immobilization has become an essential requirement. With such information, it would be possible to make predictions regarding details of interactions involving the participating components on the biomolecule and the reactive surface. Moreover, the residues on the biomolecule available for interaction with other proteins and ligands in solution and for binding to the reactive groups at the surface could be identified. Furthermore, customized surface chemistries resulting in a desirable immobilization orientation would become facilitated, resulting in a more targeted approach to protein immobilization.Despite the increasing need to understand how proteins attach to cellular and artificial surfaces, experimental details of the orientation by which proteins are immobilized are, to our knowledge, available only in two cases [type I hexokinase and mitochondrial creatine kinase (MtCK)] because of the difficulty in obtaining reliable experimental data. As for membrane proteins, the structure of only a limited number of cases (e.g., bacteriorhodopsin, and microsomal P450, see refs. 1 and 2) have been determined, because of the inherent difficulties associated with their crystallization. The other main stru...

show abstract

Section: Theoretical Modelsmentioning

confidence: 99%

Prediction of protein orientation upon immobilization on biological and nonbiological surfaces

Talasaz

Nemat‐Gorgani

Liu

et al. 2006

Proc. Natl. Acad. Sci. U.S.A.

View full text Add to dashboard Cite

show abstract

“…Simulations based on the PROPHET code [11] showed that the deep S/D implants do not affect the effective channel length. The 30 mV shift observed in the 21 Å gate oxide devices was obtained in simulations by "implanting" approximately cm B atoms into the channel area.…”

Section: Discussionmentioning

confidence: 98%

The effect of fluorine from BF₂ source/drain extension implants on performance of PMOS transistors with thin gate oxides

Bourdelle¹,

Gossmann²,

Chaudhry³

et al. 2001

IEEE Electron Device Lett.

View full text Add to dashboard Cite

Boron penetration from the gate electrode into the Si substrate presents a significant problem in advanced PMOS device fabrication. Boron penetration, which causes a degradation of many transistor parameters, is further enhanced when BF 2 is used to dope the gate electrode. It is known that pile-up of fluorine from the BF 2 gate implant at the polysilicon/gate oxide interface is responsible for the enhanced boron penetration. However, no reports have been made that address enhanced boron penetration due to fluorine from the source/drain (S/D) implants. It is shown here that fluorine from the S/D extension implants is also a significant problem, degrading transistor performance for gate oxide thickness less than 27 Å and gate lengths less than 0.5 m.

show abstract

“…Fig. 1 depicts the numerically simulated [12], [13] hole concentration in a bipolar transistor in the low injection regime of operation. The simulated hole concentration in the quasi-neutral base regions of the indium-implanted transistor is about a factor of 8-10 lower than the boron-implanted transistor due to the impurity freeze-out effect [see also (1)].…”

mentioning

confidence: 99%

Silicon npn bipolar transistors with indium-implanted base regions

Kizilyalli¹,

Chen²,

Nagy³

et al. 1997

IEEE Electron Device Lett.

View full text Add to dashboard Cite

In this paper, silicon npn bipolar transistors with indium-implanted base regions are discussed. Polysilicon emitter bipolar transistors are fabricated using a standard 0.5-m BIC-MOS process flow [1] where the base BF2 implant is replaced by an indium implant. In indium-implanted transistors, the integrated hole concentration (G b ) in the quasi-neutral base is reduced due to incomplete ionization of indium acceptor states. The novel utilization of this impurity freeze-out effect results in much increased collector currents and common-emitter transistor gains (h fe ) compared to boron-implanted transistors. Also, since indium acceptor states in depletion regions become fully ionized, the spreading of the reverse-biased collector-base junction depletion region into the transistor base (base-width modulation) is minimized. Hence, for indium base bipolar transistor an improved h fe -V A product is anticipated. Our first attempt at fabricating bipolar transistors with indium-implanted base regions resulted in devices with greatly increased collector current, impressive gains of h fe 1600, excellent collector current saturation characteristics, an Early Voltage of V A 10 V, h fe -V A product of 16 000 (implying an extended device design space), base-emitter breakdown voltages of BV EBO 9:6 V, and a cut-off frequency of ft = 17:8 GHz.

show abstract

Three-dimensional characterization of bipolar transistors in a submicron BiCMOS technology using integrated process and device simulation

Cited by 34 publications

References 6 publications

Prediction of protein orientation upon immobilization on biological and nonbiological surfaces

Prediction of protein orientation upon immobilization on biological and nonbiological surfaces

The effect of fluorine from BF₂ source/drain extension implants on performance of PMOS transistors with thin gate oxides

Silicon npn bipolar transistors with indium-implanted base regions

Contact Info

Product

Resources

About

Three-dimensional characterization of bipolar transistors in a submicron BiCMOS technology using integrated process and device simulation

Cited by 34 publications

References 6 publications

Prediction of protein orientation upon immobilization on biological and nonbiological surfaces

Prediction of protein orientation upon immobilization on biological and nonbiological surfaces

The effect of fluorine from BF2 source/drain extension implants on performance of PMOS transistors with thin gate oxides

Silicon npn bipolar transistors with indium-implanted base regions

Contact Info

Product

Resources

About

The effect of fluorine from BF₂ source/drain extension implants on performance of PMOS transistors with thin gate oxides