Ti layer thickness dependence on electromigration performance of Ti-AlCu metallization

Analysis of the reservoir effect on electromigration reliability

“…4(c) is affected by the condition of barrier metal layered on the Metal 1. However, because the low current density, 2 MA/cm 2 , calculated during this electromigration test and TiN layer under W via of this study can be robust 'blocking boundary' for Al atoms migration [29][30][31], we only focus on the second type of failure to analyze the reservoir effect on electromigration lifetime shown in Fig. 4(b).…”

“…Median time to failure (MTTF) is obtained from a best-fit straight line drawn through data points in the lognormal plot of time to failure as shown in Fig. 10, which is given by the intercept at the 50% cumulative failure point (t 50 ) [29,30]. Table 3 clearly shows that electromigration lifetime is improved much better for the metal interconnection with larger reservoir (0.3 lm) in both case of 3% and 20% criteria.…”

Investigating the electromigration reliability of copper interconnects

“…could be assigned to Cu° or CU2O (i.e., Cu + ) for the control specimen and the one with NH3 treatment. However, when the specimens are subject to H 2 or SiFLt treatments, the Cu 2p 3 /2 peak shifts to 932.9 eV, corresponding to the Cu-Si bond [191]. This observation agrees well with…”