Time Dependent Isolation Capability of High Voltage Deep Trench Isolation

Comparison of different device concepts to increase the operating voltage of a trench isolated SOI technology to above 900V

“…The observed difference of the trench isolation capability with regards to voltage polarity and corner geometry has been observed already for lower voltages [15], [16]. For 900V applications single trench isolation might be sufficient with 135° corner angles and correct polarity.…”

The optimization of deep trench isolation structure for high voltage devices on SOI substrate

“…Compared with PN junction isolation, deep trench structure on SOI substrate shows a lot of advantages, such as minimal space consumption, bi-directional isolation, lower leakage current, higher stopping latch-up performance and stronger temperature tolerance in smart power applications [1][2][3]. In recent years, the isolation characteristics of deep trench have been published in many literatures.…”

Investigation on the field leakage current in 0.35μm CMOS technology at high temperature

“…Recently, trench Silicon-on-insulator (SOI) technology has been developed in the X-FAB semiconductor Foundries [5], in order to improve the device performance, reliability, and system performances. SOI has a benefit compared with the junction isolation (JI) technology due to lower field leakage current at high temperature.…”