Toward 1550-nm GaAs-Based Lasers Using InAs/GaAs Quantum Dot Bilayers

Majid, Mohammed Abdul; Childs, David; Shahid, Hifsa; Chen, Siming; Kennedy, K.; Airey, R.; Hogg, R. A.; Clarke, Edmund M.; Howe, P.; Spencer, Peter; Murray, R.

doi:10.1109/jstqe.2011.2108270

Cited by 17 publications

(15 citation statements)

References 50 publications

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“…The difference between the two QD layers is that the top layer QDs are the energy ground state of the system, therefore one can observe luminescence even at low carrier densities, because of the efficient feeding with carriers. The inequality of luminescence signal level of top and bottom QDs is also partly due to the suppressed feeding of the bottom layer QDs, as they are expected to be coupled to the top layer [9,11]. Higher excitation densities overcome this effect due to just filling the higher energy states of the entire system, and one can observe broad luminescence from the seed layer QDs in addition to the one from the top layer.…”

Section: Resultsmentioning

confidence: 99%

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Energy Transfer Processes in InAs/GaAs Quantum Dot Bilayer Structure

et al. 2016

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We investigate double layer InAs/GaAs quantum dots grown in the Stransky-Krastanov mode by molecular beam epitaxy. The sample consists of two layers of InAs quantum dots separated by 10 nm thick GaAs layer, where the top quantum dot layer of an improved homogeneity is covered by an InGaAs cap. This configuration has allowed for the extension of the dots' emission to longer wavelengths. We probed the carrier transfer between the states confined in a double quantum well composed of InGaAs cap and the quantum dots wetting layer to the states in the quantum dots by means of photoluminescence excitation and photoreflectance spectroscopies. Efficient emission from quantum dots excited at the double quantum well ground state energy was observed. There is also presented a discussion on the carrier injection efficiency from the capping layer to the quantum dots.

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Section: Resultsmentioning

confidence: 99%

“…To extend the emission layer to longer wavelengths, the upper layer was covered with 4 nm layer of In 0.25 Ga 0.75 As to suppress the strain-enhanced indium and gallium intermixing in the top-layer QDs and then capped with 100 nm GaAs. Further details on the growth procedure can be found elsewhere [9].…”

Section: Methodsmentioning

confidence: 99%

Energy Transfer Processes in InAs/GaAs Quantum Dot Bilayer Structure

et al. 2016

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“…To fabricate low-density InAs QDs by molecular beam epitaxy (MBE), some constructive schemes have been proposed, such as ultralow growth rate [3], high growth temperature [7–9], and precise control of deposition amount [10] of QDs and the isolation of QDs by growth on a mesa/hole-patterned substrate [11] or etching into micropillars [12, 13]. To extend their emission wavelength, several techniques have been developed, such as strain engineering of QDs [14], metamorphic structures [2], and strain-coupled bilayer QD (BQD) structure [15–17]. BQD structure on GaAs substrate is effective to achieve emission above 1.3 μm.…”

Section: Introductionmentioning

confidence: 99%

Bright Single-Photon Source at 1.3 μm Based on InAs Bilayer Quantum Dot in Micropillar

Chen

Shang

et al. 2017

Nanoscale Res Lett

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A pronounced high count rate of single-photon emission at the wavelength of 1.3 μm that is capable of fiber-based quantum communication from InAs/GaAs bilayer quantum dots coupled with a micropillar (diameter ~3 μm) cavity of distributed Bragg reflectors was investigated, whose photon extraction efficiency has achieved 3.3%. Cavity mode and Purcell enhancement have been observed clearly in microphotoluminescence spectra. At the detection end of Hanbury-Brown and Twiss setup, the two avalanched single-photon counting modules record a total count rate of ~62,000/s; the time coincidence counting measurement demonstrates single-photon emission, with the multi-photon emission possibility, i.e., g 2(0), of only 0.14.

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“…These structures combine the advantage of mature fabrication and material processing technology with compatibility and straightforward integration. One of efficient methods to reach emission at 1.3 µm is to engineer the strain in InAs/GaAs QDs: usage of InGaAs strain reducing layer [1][2][3][4][5][6][7][8][9][10], bilayer of different-size QDs was the first layer acting as a seeding layer and modifying the strain conditions for the second one [11][12][13], increase of QD height by growth up to second critical thickness [14], or nitrization of InAs/GaAs QDs [15].…”

Section: Introductionmentioning

confidence: 99%

Optimizing the InGaAs/GaAs Quantum Dots for 1.3 μm Emission

et al. 2017

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Hereby we present comprehensive experimental and theoretical study on fundamental optical properties and electronic structure of GaAs-based quantum dots grown using metalorganic chemical vapor deposition technique. Substantial redshift of emission to the second telecommunication window of 1.3 µm is obtained via strain engineering utilizing additional capping layer of In0.2Ga0.8As in this context referred to as strain reducing layer. The quantum dot structure has been experimentally characterized by means of photoreflectance spectroscopy and power-dependent photoluminescence revealing 3 transitions originating from hybrid states confined in an asymmetric double quantum well formed of the wetting layer and strain reducing layer, as well as higher states of the quantum dots themselves with the first excited state transition separated by 67 meV from the ground state transition. Origin of the observed transitions was confirmed in theoretical modelling using 1-band single-particle approach for the quantum well part, and excitonic quantum dot spectrum was obtained within 8 band k · p formalism followed by configuration interaction calculations, respectively. Additionally, photoluminescence excitation spectroscopy measurements allowed identifying a spectral range for efficient quasi-resonant excitation of the investigated quantum dots into the 2D density of states to be in the range of 835-905 nm.

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Toward 1550-nm GaAs-Based Lasers Using InAs/GaAs Quantum Dot Bilayers

Cited by 17 publications

References 50 publications

Energy Transfer Processes in InAs/GaAs Quantum Dot Bilayer Structure

Energy Transfer Processes in InAs/GaAs Quantum Dot Bilayer Structure

Bright Single-Photon Source at 1.3 μm Based on InAs Bilayer Quantum Dot in Micropillar

Optimizing the InGaAs/GaAs Quantum Dots for 1.3 μm Emission

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