Toward a Predominant Substitutional Bonding Environment in B-Doped Single-Walled Carbon Nanotubes

Abstract

B-doped single-walled carbon nanotubes have been synthesized from sodium tetraphenyl borate and record incorporation percentages of B heteroatoms have been found in this material as-synthesized. However, carbonaceous impurities, besides other byproducts, can still contain boron and therefore exhibit various types of competing bonding environments. To circumvent this issue, which has constantly hindered a conclusive insight to the existing bonding environments in materials alike, we have employed a purification method, which leaves ∼7% at. of B atoms of the total sample composition almost exclusively in the sp 2 configuration. This record B substitutional doping, together with the identification of the competing bonding environments are revealed here unambiguously from X-ray photoelectron spectroscopy. The doping level in the purified tubes is about an order of magnitude larger than in other B-doped single-walled tubes even without purification, and brings the state-of-the-art closer to the controlled applicability of this material.

Boron-Doped Single-Walled Carbon Nanotubes with Enhanced Thermoelectric Power Factor for Flexible Thermoelectric Devices

“…Boron doping in carbon nanotubes has been achieved by in situ doping during laser ablation, arc discharge, and chemical vapor deposition (CVD) − or by after-synthesis doping using postsubstitution reaction . Incorporation rates of substitutional boron in SWCNT lattices are in general low (<1 atom %), , and efforts in this field are being made to increase the boron dopant concentration. , Boron-doped single-walled carbon nanotubes (B-SWNTs) can be produced in significant amounts, which is advantageous for the potential TE applications.…”

“…Boron doping in carbon nanotubes has been achieved by in situ doping during laser ablation, arc discharge, and chemical vapor deposition (CVD) − or by after-synthesis doping using postsubstitution reaction . Incorporation rates of substitutional boron in SWCNT lattices are in general low (<1 atom %), , and efforts in this field are being made to increase the boron dopant concentration. , Boron-doped single-walled carbon nanotubes (B-SWNTs) can be produced in significant amounts, which is advantageous for the potential TE applications. So a pioneer study has reported increased Seebeck coefficient, S , values for CVD produced B-SWCNTs compared to those for pristine SWCNTs .…”

Emerging Internet of Things driven carbon nanotubes-based devices

“…The transparent conduction of electrodes is important to photoelectronic devices, such as solar cells and photodetectors. Commercial transparent conducting oxides, such as indium-tin oxide [221] and fluorine-doped tin oxide [222], are predominantly n-type doping due to oxygen vacancies. The limitation for transporting electrons does not satisfy the hole transport requirement for collecting generated solar absorber materials.…”

Thermoelectric Power Factor of Boron‐Doped Carbon Nanotubes Reinforced Cementitious Composites

“…[43,44] Unlike chemical doping, in this method, the boron atoms are stable after entering the carbon nanotube lattice, and the dopants interact covalently with the host atoms, exhibiting a strong capacity to modify the electronic properties of carbon nanotubes, and the resulting doped carbon tubes will have a high degree of structural stability. [45,46] At this stage, boron-doped carbon tubes are mainly doped in situ by laser ablation, [47] arc discharge, [48] and chemical vapor deposition (CVD) [49,50] or by synthesis through postreaction. [51] For the substitution reaction of CNTs B x C 1Àx , the following chemical reactions have been previously proposed…”

“…The doping rate of substituted boron in the carbon nanotube lattice is usually low, and efforts are underway to increase the boron doping concentration in this field. [49,50] B-CNTs can be prepared in large quantities, and this is advantageous for potential TE applications. During this period, thermoelectric properties were improved by boron doping of CNTs.…”