Transfer‐Free Growth of Few‐Layer Graphene by Self‐Assembled Monolayers

Shin, Hyu-Soung; Choi, Won Mook; Yoon, Sang Youl; Han, Gang; Woo, Yun Sung; Kim, Eun Sung; Chae, Seung Jin; Li, Xiang-Shu; Benayad, Anass; Duong, Dinh Loc; Güneş, Fethullah; Lee, Young Hee; Choi, Jae‐Young

doi:10.1002/adma.201102526

Cited by 83 publications

(58 citation statements)

References 24 publications

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“…11,12 We emphasize that the graphene grown by annealing at 600 °C shows significantly better uniformity than other reports of growth from solid carbon across the literature, while the graphitic quality is comparable to the best reported values, even when notably higher growth temperatures (≥900 °C) were used. 6−8 …”

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confidence: 99%

Introducing Carbon Diffusion Barriers for Uniform, High-Quality Graphene Growth from Solid Sources

et al. 2013

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Carbon diffusion barriers are introduced as a general and simple method to prevent premature carbon dissolution and thereby to significantly improve graphene formation from the catalytic transformation of solid carbon sources. A thin Al2O3 barrier inserted into an amorphous-C/Ni bilayer stack is demonstrated to enable growth of uniform monolayer graphene at 600 °C with domain sizes exceeding 50 μm, and an average Raman D/G ratio of <0.07. A detailed growth rationale is established via in situ measurements, relevant to solid-state growth of a wide range of layered materials, as well as layer-by-layer control in these systems.

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confidence: 99%

Introducing Carbon Diffusion Barriers for Uniform, High-Quality Graphene Growth from Solid Sources

et al. 2013

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“…As there is no significant solubility of carbon in copper, the film formation is expected to be very inhomogeneous. Alternatively Cu is used as catalytic material to convert a self-assembled monolayer as carbon source at the Cu/SiO 2 substrate to graphene [31]. …”

Section: Reviewmentioning

confidence: 99%

The integration of graphene into microelectronic devices

Ruhl¹,

Wittmann²,

Koenig³

2017

Beilstein J. Nanotechnol.

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Since 2004 the field of graphene research has attracted increasing interest worldwide. Especially the integration of graphene into microelectronic devices has the potential for numerous applications. Therefore, we summarize the current knowledge on this aspect. Surveys show that considerable progress was made in the field of graphene synthesis. However, the central issue consists of the availability of techniques suitable for production for the deposition of graphene on dielectric substrates. Besides, the encapsulation of graphene for further processing while maintaining its properties poses a challenge. Regarding the graphene/metal contact intensive research was done and recently substantial advancements were made towards contact resistances applicable for electronic devices. Generally speaking the crucial issues for graphene integration are identified today and the corresponding research tasks can be clearly defined.

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“…Although high-quality graphene is synthesized by useful methods, the post-contaminations during the transfer process of a synthesized graphene sheet to a substrate results in deformation of the pristine properties, which can limit the potential use of graphene. The post-contamination (e.g., metal ion impurities and polymer residuals) in the transfer process of a CVD graphene sheet can produce wrinkles and cracks [9,10]. Thus, the alternative direct synthesis of graphene on a dielectric substrate (e.g., silicon dioxide, SiO 2 ) was introduced to avoid post-contamination [4,11].…”

Section: Introductionmentioning

confidence: 99%