Transfer-printing-based integration of single-mode waveguide-coupled III-V-on-silicon broadband light emitters

Abstract

We present the first III-V opto-electronic components transfer printed on and coupled to a silicon photonic integrated circuit. Thin InPbased membranes are transferred to an SOI waveguide circuit, after which a single-spatial-mode broadband light source is fabricated. The process flow to create transfer print-ready coupons is discussed. Aqueous FeCl 3 at 5 • C was found to be the best release agent in combination with the photoresist anchoring structures that were used. A thin DVS-BCB layer provides a strong bond, accommodating the post-processing of the membranes. The resulting optically pumped LED has a 3 dB bandwidth of 130 nm, comparable to devices realized using a traditional die-to-wafer bonding method.

Silicon photonics fiber-to-the-home transceiver array based on transfer-printing-based integration of III-V photodetectors

“…Transfer printing, as a novel technique, was first proposed in 2004 [9]. By utilizing this technique, micron-scale thin films such as III-V material coupons and devices [10][11][12][13] can be transferred from a source substrate to a target substrate with high alignment accuracy (+/-1.5 μm 3σ). More information on the transfer printing process of III-V coupons can be found in [10].…”

“…By utilizing this technique, micron-scale thin films such as III-V material coupons and devices [10][11][12][13] can be transferred from a source substrate to a target substrate with high alignment accuracy (+/-1.5 μm 3σ). More information on the transfer printing process of III-V coupons can be found in [10]. Since the material coupons/devices can be wafer-scale pre-defined in a dense array on the III-V source wafer and picked-up and printed in a massively parallel way, the efficiency of the usage of source material is significantly improved and the cost of the integration is greatly reduced.…”

Comparison of InGaAs and InAlAs sacrificial layers for release of InP-based devices

“…For applications in telecommunication where the wavelengths of interest range from 1300 nm -1600 nm it is necessary to use InP-based materials as these provide the most mature structures for lasers, amplifiers, modulators and detectors. The heterogeneous integration of InP-based etched facet lasers onto Si and of LEDs to Si waveguides has been recently demonstrated by using μTP [12,13]. In order to implement the μTP technique, coupons of material or pre-fabricated devices are prepared, encapsulated and released from their native substrate by the selective etching of an underlying sacrificial layer contained within the layered structure while the devices are held in place using a tethering system.…”

Transfer Print Integration of 40Gbps Germanium Photodiodes onto Silicon Photonic ICs

“…a 200mm SOI wafer. This is particularly interesting for the development of scalable III-V-on-silicon integration 3 or the integration of Si/Ge photonic devices on passive waveguide circuits. While such Si/Ge active devices (photodetectors, modulators) can be integrated monolithically with passive silicon waveguide circuits, an important issue is the slow turnaround time for wafer fabrication, as the full flow comprises a > 30 mask level processing in a CMOS fab.…”