Transparent Resistive Switching Memory Using ITO/AlN/ITO Capacitors

Kim, Hee‐Dong; An, Hongyu; Seo, Yujeong; Kim, Tae Geun

doi:10.1109/led.2011.2158056

Cited by 66 publications

(47 citation statements)

References 10 publications

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“…As a result, the transmittance can be further increased to ~95% (blue curve, Fig. 2b), which is higher and more uniform than those achieved in other systems [11][12][13]30 .…”

Section: Resultsmentioning

confidence: 72%

“…The SiO x memory here features low programming current levels (~0.1 mA, Fig. 3b), more than one order of magnitude lower than those in other transparent resistive memory systems [11][12][13]30 . Consequently, despite a working voltage up to 15 V, the devices still feature an approximately tenfold reduction in the power-consumption factor (the product of current and voltage) during programming compared with those in other transparent resistive memories [11][12][13] .…”

Section: Resultsmentioning

confidence: 76%

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Highly transparent nonvolatile resistive memory devices from silicon oxide and graphene

Yao¹,

et al. 2012

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Transparent electronic memory would be useful in integrated transparent electronics. However, achieving such transparency produces limits in material composition, and hence, hinders processing and device performance. Here we present a route to fabricate highly transparent memory using sio x as the active material and indium tin oxide or graphene as the electrodes. The two-terminal, nonvolatile resistive memory can also be configured in crossbar arrays on glass or flexible transparent platforms. The filamentary conduction in silicon channels generated in situ in the sio x maintains the current level as the device size decreases, underscoring their potential for high-density memory applications, and as they are two-terminal based, transitions to three-dimensional memory packages are conceivable. As glass is becoming one of the mainstays of building construction materials, and conductive displays are essential in modern handheld devices, to have increased functionality in form-fitting packages is advantageous.

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“…As a result, the transmittance can be further increased to ~95% (blue curve, Fig. 2b), which is higher and more uniform than those achieved in other systems [11][12][13]30 .…”

Section: Resultsmentioning

confidence: 72%

Section: Resultsmentioning

confidence: 76%

Highly transparent nonvolatile resistive memory devices from silicon oxide and graphene

Yao¹,

et al. 2012

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show abstract

“…1 H NMR spectra were obtained with a Bruker 400 MHz spectrometer in DMSO-d 6 . UV-visible spectra were recorded on a Perkin Elmer Lambda 25 UV/Vis spectrometer.…”

Section: Methodsmentioning

confidence: 99%

“…Recently, transparent nonvolatile memory devices have been proposed using transistor structures and resistive switching memory based on inorganic electronic materials. [2][3][4][5][6] Polymer materials have gained a great deal of attention in the field of nonvolatile memory due to the advantages of three-dimensional stacking capability, solution processability, low cost, and design versatility. [7][8][9][10] Although a polymerbased fully transparent nonvolatile memory transistor has been developed, 11 there has been no report of fully transparent nonvolatile resistive memory device based on polymeric material.…”

Section: Introductionmentioning

confidence: 99%

Fully transparent nonvolatile resistive polymer memory

Kim

Lee

et al. 2015

J. Polym. Sci. Part A: Polym. Chem.

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We present a fully transparent nonvolatile resistive polymer memory device based on an anthracene-containing partially aliphatic polyimide along with indium tin oxide (ITO) top and bottom electrodes. High transmittance of over 90% in the wavelength range of 400 to 800 nm is accomplished with an ITO/polyimide/ITO/glass device. The device shows unipolar write-once-read-many times (WORM) memory behavior with an ON/OFF current ratio of 2 3 10 3 , and the ratio remained without any significant degradation for over 10 4 s. The memory behavior of the device is considered to be governed by trap-controlled space-charge limited conduction (SCLC) and local filament formation. Based on molecular simulation of the polyimide, the location of energy states is different from that in the conventional charge transfer (CT) mechanism. Despite the relatively low ON/OFF current ratio, our results can give insight into the development of fully transparent memory device.

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“…The simple metal/insulator/metal structures have been easily applied on fully transparent RRAMs. [1][2][3] Among the various dielectric layers, the biomaterials have many advantages such as biocompatible and biodegradable. Moreover, these biomaterials can be designed easily through chemical synthesis and processed into different shapes.…”

mentioning

confidence: 99%

Solution-processed Al-chelated gelatin for highly transparent non-volatile memory applications

Chang

Wang

2015

Applied Physics Letters

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Using the biomaterial of Al-chelated gelatin (ACG) prepared by sol-gel method in the ITO/ACG/ITO structure, a highly transparent resistive random access memory (RRAM) was obtained. The transmittance of the fabricated device is approximately 83% at 550 nm while that of Al/gelatin/ITO is opaque. As to the ITO/gelatin/ITO RRAM, no resistive switching behavior can be seen. The ITO/ACG/ITO RRAM shows high ON/OFF current ratio (>105), low operation voltage, good uniformity, and retention characteristics at room temperature and 85 °C. The mechanism of the ACG-based memory devices is presented. The enhancement of these electrical properties can be attributed to the chelate effect of Al ions with gelatin. Results show that transparent ACG-based memory devices possess the potential for next-generation resistive memories and bio-electronic applications.

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Transparent Resistive Switching Memory Using ITO/AlN/ITO Capacitors

Cited by 66 publications

References 10 publications

Highly transparent nonvolatile resistive memory devices from silicon oxide and graphene

Highly transparent nonvolatile resistive memory devices from silicon oxide and graphene

Fully transparent nonvolatile resistive polymer memory

Solution-processed Al-chelated gelatin for highly transparent non-volatile memory applications

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